Display device

ABSTRACT

A display device in which parasitic capacitance between wirings can be reduced is provided. Furthermore, a display device in which display quality is improved is provided. Furthermore, a display device in which power consumption can be reduced is provided.The display device includes a signal line, a scan line, a first electrode, a second electrode, a third electrode, a first pixel electrode, a second pixel electrode, and a semiconductor film. The signal line intersects with the scan line, the first electrode is electrically connected to the signal line, the first electrode has a region overlapping with the scan line, the second electrode faces the first electrode, the third electrode faces the first electrode, the first pixel electrode is electrically connected to the second electrode, the second pixel electrode is electrically connected to the third electrode, the semiconductor film is in contact with the first electrode, the second electrode, and the third electrode, and the semiconductor film is provided between the scan line and the first electrode to the third electrode.

TECHNICAL FIELD

One embodiment of the present invention relates to a display device.Note that one embodiment of the present invention is not limited to theabove technical field. The technical field of one embodiment of theinvention disclosed in this specification and the like relates to anobject, a method, or a manufacturing method. Furthermore, one embodimentof the present invention relates to a process, a machine, manufacture,or a composition of matter (composition of matter). Thus, morespecifically, examples of the technical field of one embodiment of thepresent invention disclosed in this specification can include asemiconductor device, a display device, a liquid crystal display device,a light-emitting device, a power storage device, an imaging device, amethod for driving any of them, and a method for manufacturing any ofthem.

BACKGROUND ART

In recent years, as liquid crystal display devices in which viewingangle characteristics and display quality are improved, verticallyaligned (VA: Vertically Aligned) liquid crystal display devices areprovided. As a VA liquid crystal display device, a liquid crystaldisplay device with a multi-domain structure which includes a pluralityof pixel electrodes and transistors connected to the respective pixelelectrodes and controlling the potentials of the pixel electrodes in onepixel is provided. When one pixel is provided with a plurality of pixelelectrodes, liquid crystal alignment can be made different between thepixel electrodes; therefore, a viewing angle can be large as comparedwith that of a conventional VA liquid crystal display device (see PatentDocument 1).

Moreover, there is a trend in a liquid crystal display device toward alarger size, e.g., a screen size with a diagonal of 60 inches or more,and further, the development is aimed even at a screen size with adiagonal of 120 inches or more. In addition, a trend in resolution of ascreen is toward higher definition, e.g., full high-definition imagequality (FHD, 1920×1080) and 4K image quality (3840×2160), anddevelopment of a liquid crystal display device with 7680×4320 pixels,i.e., resolution as high as what is called 8K, is imperative.

In order to reduce image sticking and improve the display quality,high-speed driving whose driving rate is doubled (also referred to as adouble-frame rate driving) is performed, and further, high-speed drivingat a quadruple-frame rate or higher is considered. Furthermore, in orderto provide a liquid crystal display device with three-dimensional (3D)display, an image for the right eye and an image for the left eye needto be displayed alternately; thus, the liquid crystal display device isrequired to be operated by high-speed operation by driving at adouble-frame rate or higher.

REFERENCE Patent Document [Patent Document 1] Japanese Published PatentApplication No. 2006-317867 SUMMARY OF THE INVENTION Problems to beSolved by the Invention

However, as a liquid crystal display device has a larger size and ahigher definition, the number of pixels needed is significantlyincreased and writing time for one pixel is shortened. Therefore, atransistor which controls the potential of a pixel electrode is requiredto have high-speed operation, high on-state current, and the like.

Furthermore, increase in parasitic capacitance between wirings causesdelay of signal transmission to an end of a signal line. As a result,deterioration of display quality, such as display unevenness or a defectin grayscale, or increase in power consumption is caused.

Thus, an object of one embodiment of the present invention is to providea display device in which parasitic capacitance between wirings can bereduced. An object of one embodiment of the present invention is toprovide a display device with improved display quality. An object of oneembodiment of the present invention is to provide a display device inwhich power consumption can be reduced. An object of one embodiment ofthe present invention is to provide a novel semiconductor device, anovel display device, or the like.

Note that the descriptions of these objects do not preclude theexistence of other objects. In one embodiment of the present invention,there is no need to achieve all the objects. Objects other than theseobjects will be apparent from the description of the specification, thedrawings, the claims, and the like, and objects other than these objectscan be derived from the description of the specification, the drawings,the claims, and the like.

Means for Solving the Problems

One embodiment of the present invention is a display devicecharacterized by including a signal line, a scan line intersecting withthe signal line, a first electrode electrically connected to the signalline, a second electrode facing the first electrode, a third electrodefacing the first electrode, a first pixel electrode electricallyconnected to the second electrode, a second pixel electrode electricallyconnected to the third electrode, and a semiconductor film being incontact with the first electrode to the third electrode and providedbetween the scan line and the first electrode to the third electrode andin that the first electrode includes a region overlapping with the scanline.

Another embodiment of the present invention is the above-describeddisplay device characterized by including a gate insulating film betweenthe scan line and the semiconductor film and in that the firsttransistor is composed of the scan line, the gate insulating film, thesemiconductor film, the first electrode, and the second electrode, andthe second transistor is composed of the scan line, the gate insulatingfilm, the semiconductor film, the first electrode, and the thirdelectrode.

Another embodiment of the present invention is the above-describeddisplay device characterized by including a first capacitor wiringelectrically connected to the first pixel electrode and a secondcapacitor wiring electrically connected to the second pixel electrodeand in that the signal line includes a region overlapping with a regionbetween the first pixel electrode and the second pixel electrode and thesignal line does not include a region overlapping with the firstcapacitor wiring and the second capacitor wiring.

Another embodiment of the present invention is the above-describeddisplay device characterized in that the first electrode is providedbetween the second electrode and the third electrode in the top surfaceshape.

Another embodiment of the present invention is the above-describeddisplay device characterized in that the semiconductor film contains anoxide containing In, M (M is aluminum, gallium, yttrium, or tin), andZn.

Another embodiment of the present invention is the above-describeddisplay device characterized in that the semiconductor film includes afirst semiconductor film and a second semiconductor film including aregion overlapping with the first semiconductor film, and the firstsemiconductor film contains an oxide with a composition in which theatomic proportion of In is higher than that of M by a larger differencethan in the composition of an oxide contained in the secondsemiconductor film.

Effect of the Invention

When one embodiment of the present invention is used, parasiticcapacitance between wirings of a display device can be reduced. When oneembodiment of the present invention is used, display quality of adisplay device can be improved. When one embodiment of the presentinvention is used, power consumption of a display device can be reduced.Alternatively, when one embodiment of the present invention is used, anovel semiconductor device, a novel display device, or the like can beprovided. Note that the description of these effects does not precludethe existence of other effects.

One embodiment of the present invention does not necessarily all ofthese effects.

Effects other than these effects will be apparent from the descriptionof the specification, the drawings, the claims, and the like, andeffects other than these effects can be derived from the description ofthe specification, the drawings, the claims, and the like.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A-1C Top views and a circuit diagram of one embodiment of apixel.

FIGS. 2A-2B A top view and a circuit diagram of a pixel illustrating oneembodiment of the present invention.

FIGS. 3A-3B A top view and a circuit diagram of one embodiment of apixel.

FIG. 4 A cross-sectional view of one embodiment of a pixel.

FIG. 5 Atop view of one embodiment of a pixel.

FIG. 6 Atop view of one embodiment of a pixel.

FIGS. 7A-7D Top views and a circuit diagram of one embodiment of apixel.

FIGS. 8A-8B Atop view and a circuit diagram of one embodiment of apixel.

FIG. 9 A cross-sectional view of one embodiment of a pixel.

FIGS. 10A-10C Cross-sectional views showing an example of amanufacturing process of a semiconductor device.

FIGS. 11A-11C Cross-sectional views showing an example of amanufacturing process of a semiconductor device.

FIGS. 12A-12C Cross-sectional views showing an example of amanufacturing process of a semiconductor device.

FIGS. 13A-13B Cross-sectional views showing an example of amanufacturing process of a semiconductor device.

FIGS. 14A-14C Cross-sectional views showing an example of amanufacturing process of a semiconductor device, and a top view andcross-sectional views showing one embodiment of a semiconductor device.

FIGS. 15A-15C Cross-sectional views each showing one embodiment of asemiconductor device.

FIGS. 16A-16B A top view and cross-sectional views showing oneembodiment of a semiconductor device.

FIGS. 17A-17C Cross-sectional views showing one embodiment of asemiconductor device.

FIG. 18 A view illustrating a band structure.

FIGS. 19A-19D Cs-corrected high-resolution TEM images of a cross sectionof a CAAC-OS and a cross-sectional schematic view of a CAAC-OS.

FIGS. 20A-20D Cs-corrected high-resolution TEM images of a plane of aCAAC-OS.

FIGS. 21A-21C Views showing structural analysis of a CAAC-OS and asingle crystal oxide semiconductor by XRD.

FIGS. 22A-22B Views showing electron diffraction patterns of a CAAC-OS.

FIG. 23 A view showing a change of crystal parts of an In—Ga—Zn oxideowing to electron irradiation.

FIG. 24 Atop view showing one embodiment of a display device.

FIG. 25 A cross-sectional view showing one embodiment of a displaydevice.

FIG. 26 A cross-sectional view showing one embodiment of a displaydevice.

FIG. 27 A view illustrating a display module.

FIGS. 28A-28G Views illustrating electronic devices.

MODES FOR CARRYING OUT THE INVENTION

Embodiments of the present invention will be described with reference tothe drawings. However, the present invention is not limited to thefollowing description. This is because it is easily understood by thoseskilled in the art that the mode and detail can be variously modifiedwithout departing from the scope and spirit of the present invention.Therefore, the present invention should not be interpreted as beinglimited to the description of the embodiments to be given below. Notethat reference numerals denoting the same portions are commonly used indifferent drawings in describing the structure of the present inventionwith reference to the drawings.

Note that, in this specification, the terms “first”, “second”, “third”,to “n-th (n is a natural number)” are used to prevent confusion betweencomponents, and thus do not limit numbers.

Note that the term “film” and the term “layer” can be interchanged witheach other depending on circumstances or depending on conditions. Forexample, the term “conductive layer” can be changed into the term“conductive film” in some cases. Alternatively, for example, the term“insulating film” can be changed into the term “insulating layer” insome cases.

Embodiment 1

In this embodiment, structures of one pixel of a liquid crystal displaydevice will be described with reference to FIG. 1 to FIG. 9 .

FIG. 1(A) is atop view of one pixel 100 of a liquid crystal displaydevice having a multi-domain structure, which is described in thisembodiment, and FIG. 1(B) is a circuit diagram of the pixel 100 in FIG.1(A). Furthermore, FIG. 2(A) is a top view of one pixel 200 of a liquidcrystal display device having a conventional multi-domain structure, andFIG. 2(B) shows a circuit diagram of the pixel in FIG. 2(A).

As illustrated in FIG. 1(A) and FIG. 1(B), the pixel 100 includes a scanline 103 and a signal line 121 intersecting with the scan line 103. Inaddition, a capacitor wiring 105 a and a capacitor wiring 105 b whichextend in the same direction as the scan line 103 are included. Notethat the scan line 103 is provided between the capacitor wiring 105 aand the capacitor wiring 105 b.

In addition, a transistor 136 and a transistor 137 are provided in thevicinity of the intersection portion of the scan line 103 and the signalline 121. The transistor 136 includes a semiconductor film 135overlapping with the scan line 103, and a first electrode 123 and asecond electrode 125 a which overlap with the semiconductor film 135.The first electrode 123 is electrically connected to the signal line121. The first electrode 123 serves as one of a source electrode and adrain electrode in the transistor 136. The second electrode 125 a servesas the other of the source electrode and the drain electrode in thetransistor 136.

The transistor 137 includes the semiconductor film 135 overlapping withthe scan line 103, and the first electrode 123 and a third electrode 125b which overlap with the semiconductor film 135. The first electrode 123serves as one of a source electrode and a drain electrode in thetransistor 137. The third electrode 125 b serves as the other of thesource electrode and the drain electrode in the transistor 137.

In the top surface shape in FIG. 1(A), the transistor 136 and thetransistor 137 in each of which part of end portions of thesemiconductor film 135 is located outward from the scan line 103 servingas a gate electrode are illustrated; however, the present invention isnot limited thereto.

As illustrated in FIG. 1(C), in the transistor 136 and the transistor137 included in the pixel 100, the end portions of the semiconductorfilm 135 may be located inward from end portions of the scan line 103.

The second electrode 125 a included in the transistor 136 iselectrically connected to a pixel electrode 139 a through an opening 144a. In other words, the transistor 136 is connected to a liquid crystalelement 142 including the pixel electrode 139 a through the secondelectrode 125 a.

Furthermore, one electrode of a capacitor 140 is electrically connectedto the pixel electrode 139 a and the second electrode 125 a of thetransistor 136, and the other electrode is electrically connected to thecapacitor wiring 105 a (see FIG. 1(B)).

The third electrode 125 b included in the transistor 137 is electricallyconnected to a pixel electrode 139 b through an opening 144 b. In otherwords, the transistor 137 is connected to a liquid crystal element 143including the pixel electrode 139 b through the third electrode 125 b.

One electrode of a capacitor 141 is electrically connected to the pixelelectrode 139 b and the third electrode 125 b of the transistor 137, andthe other electrode is electrically connected to the capacitor wiring105 b (see FIG. 1(B)).

Note that the opening 144 a and the opening 144 b are provided in aninsulating film 116 described later. In addition, to avoid complexity ofthe drawings, in FIG. 1(A) and FIG. 2(A), only outlines of top surfaceshapes of the pixel electrode 139 a and the pixel electrode 139 b aredenoted by dashed lines without hatching.

The transistor 136 and the transistor 137 are located almost at thecenter of the pixel 100 in the top surface shape and formed between thepixel electrode 139 a and the pixel electrode 139 b each of which is asubpixel of the pixel 100.

One embodiment of the present invention is a display device includingthe signal line 121, the scan line 103, the first electrode 123, thesecond electrode 125 a, the third electrode 125 b, the first pixelelectrode 139 a, the second pixel electrode 139 b, and the semiconductorfilm 135. The signal line 121 intersects with the scan line 103, thefirst electrode 123 is electrically connected to the signal line 121,the first electrode 125 a has a region overlapping with the scan line103, the second electrode 125 a faces the first electrode 123, the thirdelectrode 125 b faces the first electrode 123, the first pixel electrode139 a is electrically connected to the second electrode 125 a, thesecond pixel electrode 139 b is electrically connected to the thirdelectrode 125 b, the semiconductor film 135 is in contact with the firstelectrode 123, the second electrode 125 a, and the third electrode 125b, and the semiconductor film 135 is provided between the scan line 103and the first electrode 123 to the third electrode 125 b.

Furthermore, the display device which includes a gate insulating film107, the transistor 136, and the transistor 137 and in which the gateinsulating film 107 is provided between the scan line 103 and thesemiconductor film 135, the transistor 136 includes the scan line 103,the gate insulating film 107, the semiconductor film 135, the firstelectrode 123, and the second electrode 125 a, and the transistor 137includes the scan line 103, the gate insulating film 107, thesemiconductor film 135, the first electrode 123, and the third electrode125 b is also one embodiment of the present invention.

The transistor 136 and the transistor 137 include the common firstelectrode 123, which is one of the source electrode and the drainelectrode, and the first electrode 123 overlaps with the scan line 103.With such a structure, in one pixel 100 included in the display device,parasitic capacitance generated between one electrode of each of thetransistor 136 and the transistor 137 and the scan line 103 can bereduced.

Note that as illustrated in FIG. 1(B), in the transistor 136, parasiticcapacitance C1 is generated in a portion where the scan line 103 and thesecond electrode 125 a overlap with each other. Furthermore, in thetransistor 137, parasitic capacitance C2 is generated in a portion wherethe scan line 103 and the third electrode 125 b overlap with each other.In addition, parasitic capacitance C5, parasitic capacitance C6, andparasitic capacitance C7 are respectively generated in portions wherethe signal line 121 overlaps with the scan line 103, the capacitorwiring 105 a, and the capacitor wiring 105 b.

Here, FIG. 2(A) shows, as a comparative example, a top view of a pixel200, in which two transistors included in one pixel are electricallyconnected to signal lines through the respective electrodes and theelectrodes do not overlap with the scan line. In addition, FIG. 2(B) isa circuit diagram of the pixel 200. In the description of the pixel 200,the structure similar to that of the pixel 100 is denoted by the samereference numeral, and description thereof is omitted.

As illustrated in FIG. 2(B), the pixel 200 includes a scan line 203 anda signal line 221 intersecting with the scan line 203. In addition, thecapacitor wiring 105 a and the capacitor wiring 105 b which extend inthe same direction as the scan line 203 are included. The scan line 203is provided between the capacitor wiring 105 a and the capacitor wiring105 b.

In addition, a transistor 236 and a transistor 237 are provided in thevicinity of the intersection portion of the scan line 203 and the signalline 221. The transistor 236 includes a gate electrode projected fromthe scan line 203, a fourth electrode 223 a projected from the signalline 221, and the second electrode 125 a connected to the liquid crystalelement 142. One electrode of the capacitor 140 is electricallyconnected to the pixel electrode 139 a included in the liquid crystalelement 142 and the second electrode 125 a of the transistor 236, andthe other electrode of the capacitor 140 is electrically connected tothe capacitor wiring 105 a (see FIG. 2(B)).

The transistor 237 includes a gate electrode projected from the scanline 203, a fifth electrode 223 b projected from the signal line 121,and the third electrode 125 b connected to the liquid crystal element143. One electrode of the capacitor 141 is electrically connected to thepixel electrode 139 b included in the liquid crystal element 143 and thethird electrode 125 b of the transistor 237, and the other electrode ofthe capacitor 141 is electrically connected to the capacitor wiring 105b (see FIG. 2(B)).

The transistor 236 and the transistor 237 are different from thetransistor 136 and the transistor 137 in the pixel 100 in respectivelyincluding the fourth electrode 223 a and the fifth electrode 223 b eachof which is one of the source electrode and the drain electrode. Inaddition, the fourth electrode 223 a and the fifth electrode 223 bprojected from the signal line 221 do not overlap with the scan line203.

Note that in the transistor 236, parasitic capacitance C11 is generatedin a portion where the scan line 203 and the second electrode 125 aoverlap with each other. Furthermore, parasitic capacitance C13 isgenerated in a portion where the scan line 203 and the fourth electrode223 a overlap with each other. In the transistor 237, parasiticcapacitance C12 is generated in a portion where the scan line 203 andthe third electrode 125 b overlap with each other. Furthermore,parasitic capacitance C14 is generated in a portion where the scan line203 and the fifth electrode 223 b overlap with each other. In addition,parasitic capacitance C15, parasitic capacitance C16, and parasiticcapacitance C17 are respectively generated in portions where the signalline 221 overlaps with the scan line 203, the capacitor wiring 105 a,and the capacitor wiring 105 b.

In the transistor 136 and the transistor 236, when the area of theportion where the scan line 103 and the second electrode 125 a overlapwith each other and the area of the portion where the scan line 203 andthe second electrode 125 a overlap with each other are substantially thesame, the parasitic capacitance C1 and the parasitic capacitance C11 aresubstantially the same. In addition, in the transistor 137 and thetransistor 237, when the area of the portion where the scan line 103 andthe third electrode 125 b overlap with each other and the area of theportion where the scan line 203 and the third electrode 125 b overlapwith each other are substantially the same, the parasitic capacitance C2and the parasitic capacitance C12 are substantially the same.Furthermore, when the area of a portion where the signal line 121 andthe scan line 103 overlap with each other and the area of a portionwhere the signal line 221 and the scan line 203 overlap with each otherare substantially the same, the parasitic capacitance C5 and theparasitic capacitance C15 are substantially the same. Furthermore, whenthe area of a portion where the signal line 121 and the capacitor wiring105 a overlap with each other and the area of a portion where the signalline 221 and the capacitor wiring 105 a overlap with each other aresubstantially the same, the parasitic capacitance C6 and the parasiticcapacitance C16 are substantially the same. Furthermore, when the areaof a portion where the signal line 121 and the capacitor wiring 105 boverlap with each other and the area of a portion where the signal line221 and the capacitor wiring 105 b overlap with each other aresubstantially the same, the parasitic capacitance C7 and the parasiticcapacitance C17 are substantially the same.

In the pixel 200, which is a comparative example, since electrodes eachof which serves as one of the source electrode and the drain electrodeare different electrodes in the transistor 236 and the transistor 237(the fourth electrode 223 a in the transistor 236 and the fifthelectrode 223 b in the transistor 237), parasitic capacitance C13 isgenerated between the scan line 203 and the fourth electrode 223 a andparasitic capacitance C14 is generated between the scan line 203 and thefifth electrode 223 b.

However, in the pixel 100 in this embodiment, the transistor 136 and thetransistor 137 include the common electrode (the first electrode 123)serving as one of the source electrode and the drain electrode, and theelectrode overlaps with the scan line 103 in the portion where thesignal line 121 and the scan line 103 overlap with each other. Thus, inthe transistor 136 and the transistor 137, parasitic capacitancegenerated in a portion where the electrode and the scan line 103 overlapwith each other is contained in the above-described parasiticcapacitance C5. Since the parasitic capacitance C5 and the parasiticcapacitance C15 are substantially the same, in the pixel 100, the amountof parasitic capacitance is smaller than in the pixel 200 by the amountof the parasitic capacitance C13 and the parasitic capacitance C14. Inview of the above, the display device of one embodiment of the presentinvention can reduce the parasitic capacitance generated between thewirings in one pixel 100.

Note that in the pixel 100 in this embodiment, the transistor 136 andthe transistor 137 include the common semiconductor film; thus, a regionwhere the first electrode 123 and the semiconductor film 135 are incontact with each other can be shared by the transistor 136 and thetransistor 137. As a result, the area occupied by the transistor 136 andthe transistor 137 in the pixel 100 can be reduced.

Alternatively, as illustrated in FIG. 3(A) and FIG. 3(B), the pixel 100may have a structure where the capacitor wiring 105 a and the capacitorwiring 105 b are each shared with an adjacent pixel. With such astructure, the number of capacitor wirings included in the displaydevice can be reduced. Furthermore, as illustrated in FIG. 3(A), whenthe area of a portion where the pixel electrode 139 a and the capacitorwiring 105 a overlap with each other is increased, the capacitance ofthe capacitor 140 can be increased. Similarly, when the area of aportion where the pixel electrode 139 b and the capacitor wiring 105 bis increased, the capacitance of the capacitor 141 can be increased.

Next, structures of the transistor and the capacitor included in thepixel 100 will be described with reference to FIG. 4 .

FIG. 4 illustrates a cross-sectional structure of the transistor 136 andthe capacitor 140 taken along dashed-dotted line A-B in FIG. 1(A).

The transistor 136 includes, over a substrate 101, the scan line 103,the semiconductor film 135, a gate insulating film 107 provided betweenthe scan line 103 and the semiconductor film 135, the first electrode123 in contact with the semiconductor film 135, and the second electrode125 a in contact with the semiconductor film 135.

The capacitor 140 includes, over the substrate 101, the capacitor wiring105 a, the second electrode 125 a, and the gate insulating film 107provided between the capacitor wiring 105 a and the second electrode 125a.

The insulating film 116 is provided over the gate insulating film 107,the semiconductor film 135, the first electrode 123, and the secondelectrode 125 a. In addition, the pixel electrode 139 a which iselectrically connected to the second electrode 125 a through the opening144 a formed in the insulating film 116 is provided over the insulatingfilm 116.

Although not illustrated, the transistor 137 has a structure similar tothat of the transistor 136. Furthermore, the capacitor 141 has astructure similar to that of the capacitor 140.

As the substrate 101, a glass substrate; a ceramic substrate; a plasticsubstrate which has heat resistance high enough to withstand the processtemperature of this manufacturing process; or the like can be used. Inthe case where the substrate does not need a light-transmittingproperty, a substrate of a metal such as stainless steel, provided withan insulating film on its surface may be used. As the glass substrate,for example, an alkali-free glass substrate of barium borosilicateglass, aluminoborosilicate glass, aluminosilicate glass, or the like ispreferably used. Note that there is no limitation on the size of thesubstrate 101, and for example, any of glass substrates of the thirdgeneration to the tenth generation which are often used in liquidcrystal display devices can be used. Furthermore, for the material usedfor the substrate 101, a material used for a substrate 502, which willbe described in Embodiment 2, can be referred to.

Part of the scan line 103 serves as a gate electrode of the transistor136. The scan line 103 can be formed as a single layer or a stackedlayer using a metal material such as molybdenum, titanium, chromium,tantalum, tungsten, aluminum, copper, neodymium, scandium, or nickel oran alloy material which contains any of these as a main component. Asemiconductor typified by polycrystalline silicon doped with an impurityelement such as phosphorus, an Ag—Pd—Cu alloy, an Al—Nd alloy, an Al—Nialloy, or the like may be used.

For example, as a two-layer stacked structure of the scan line 103, atwo-layer stacked structure in which a molybdenum film is stacked overan aluminum film, a two-layer structure in which a molybdenum film isstacked over a copper film, a two-layer structure in which a titaniumnitride film or a tantalum nitride film is stacked over a copper film, atwo-layer structure in which a titanium nitride film and a molybdenumfilm are stacked, a two-layer structure in which a film of acopper-magnesium alloy containing oxygen and a copper film are stacked,a two-layer structure in which a film of a copper-manganese alloycontaining oxygen and a copper film are stacked, a two-layer structurein which a copper-manganese alloy film and a copper film are stacked, orthe like is preferable. As a three-layer stacked structure, athree-layer structure in which a tungsten film or a tungsten nitridefilm, an alloy film of aluminum and silicon or an alloy film of aluminumand titanium, and a titanium nitride film or a titanium film are stackedis preferable. By stacking a metal film functioning as a barrier filmover a film having low electric resistance, electric resistance can below and diffusion of metal elements from the metal film into thesemiconductor film can be prevented. Furthermore, for the material usedfor the scan line 103, a material used for a conductive film 504, whichwill be described in Embodiment 2, can be referred to.

Note that the capacitor wiring 105 a and the capacitor wiring 105 b havea material and a stacked-layer structure similar to those of the scanline 103.

The gate insulating film 107 can be formed as a single layer or astacked layer using a silicon oxide film, a silicon oxynitride film, asilicon nitride film, a silicon nitride oxide film, an aluminum oxidefilm, an aluminum nitride film, an aluminum oxynitride film, or analuminum nitride oxide film. In this embodiment, the gate insulatingfilm 107 has a stacked-layer structure of the gate insulating film 107 aand the gate insulating film 107 b. Furthermore, for the materials usedfor the gate insulating film 107 a and the gate insulating film 107 b,materials used for an insulating film 506 and an insulating film 507,which will be described in Embodiment 2, can be referred to,respectively.

As the semiconductor film 135, a silicon film or an oxide semiconductorfilm can be used. The semiconductor film 135 can have an amorphousstructure, a polycrystalline structure, a single crystal structure, orany other crystal structure, as appropriate.

In particular, as the semiconductor film 135, an oxide semiconductorfilm can be suitably used. Specifically, an In-M (M is aluminum,gallium, yttrium, or tin) oxide or an In-M-Zn oxide can be used. Inparticular, as the semiconductor film 135, an oxide semiconductor film135 a and an oxide semiconductor film 135 b which have differentcompositions are preferably used. For the materials used for the oxidesemiconductor film 135 a and the oxide semiconductor film 135 b,materials used for an oxide semiconductor film 508 a and an oxidesemiconductor film 508 b, which will be described in Embodiment 2, canbe referred to, respectively.

The first electrode 123 and the second electrode 125 a can be formed asa single layer or a stacked layer using any of aluminum, copper,titanium, neodymium, scandium, molybdenum, chromium, tantalum, tungsten,and the like. Alternatively, they may be formed using an aluminum alloyto which an element for preventing a hillock is added (e.g., an Al—Ndalloy which can be used for the scan line 103). Crystalline silicon towhich an impurity element which serves as a donor is added may also beused. A stacked structure may be employed in which a film, which is onthe side in contact with the crystalline silicon to which an impurityelement serving as a donor is added, is formed using titanium, tantalum,molybdenum, tungsten, or a nitride of any of these elements, and thenaluminum or an aluminum alloy is formed thereover. Furtheralternatively, a stacked structure in which an upper surface and a lowersurface of aluminum or an aluminum alloy are sandwiched by titanium,tantalum, molybdenum, tungsten, or a nitride of any of these elements.Furthermore, for the materials used for the first electrode 123 and thesecond electrode 125 a, materials of a conductive film 512 a and aconductive film 512 b, which will be described in Embodiment 2, can bereferred to.

Note that the signal line 121 and the third electrode 125 b have amaterial and a stacked-layer structure similar to those of the firstelectrode 123.

The insulating film 116 has a stacked structure of an insulating film116 a, an insulating film 116 b, and an insulating film 116 c in thisembodiment. For materials and formation methods used for the insulatingfilm 116 a, the insulating film 116 b, and the insulating film 116 c,descriptions of an insulating film 514, an insulating film 516, and aninsulating film 518, which will be described in Embodiment 2, can bereferred to, respectively. Furthermore, the insulating film 116 may beformed as a single layer or a stacked layer using a material similar tothat of the gate insulating film 107.

For the pixel electrode 139 a, a single layer or a stacked layer of ametal film of molybdenum, titanium, tantalum, tungsten, aluminum,silver, copper, chromium, neodymium, scandium, or the like, or an alloyfilm that contains any of these metals. As the alloy containingaluminum, an aluminum-nickel-lanthanum alloy, an aluminum-titaniumalloy, an aluminum-neodymium alloy and the like can be given. As thealloy containing silver, a silver-neodymium alloy, a magnesium-silveralloy, and the like can be given. Alternatively, an alloy containinggold and copper can be used. Alternatively, a metal nitride filmcontaining titanium nitride, molybdenum nitride, tungsten nitride, orthe like may be used. Furthermore, for the material used for the pixelelectrode 139 a, a material used for a conductive film 520, which willbe described in Embodiment 2, can be referred to. The pixel electrode139 b has a material and a stacked-layer structure similar to those ofthe pixel electrode 139 a.

Alternatively, for the pixel electrode, an oxide semiconductor film maybe used. FIG. 5 is a top view of the pixel 100 including a pixelelectrode 148 and a pixel electrode 149 using oxide semiconductor films.FIG. 6 illustrates a cross-sectional structure of the transistor 136 anda capacitor 145 taken along dashed-dotted line C-D in FIG. 5 .

Note that in this specification and the like, an oxide conductor filmcan be referred to as an oxide semiconductor film having a high carrierdensity and a low resistance, an oxide semiconductor film havingconductivity, an oxide semiconductor film having high conductivity, orthe like.

An oxide semiconductor film is preferably used for the pixel electrode148 because when an oxide semiconductor film is used for thesemiconductor film 135, the semiconductor film 135 and the pixelelectrode 148 can be formed through the same process. The resistance ofan oxide semiconductor film can be controlled by oxygen vacancies in thefilm and/or the concentration of impurities such as hydrogen and waterin the film. Therefore, the resistivity of the semiconductor film 135and the pixel electrode 148 formed through the same process can becontrolled by selecting treatment for increasing the oxygen vacanciesand/or the impurity concentration or treatment for reducing the oxygenvacancies and/or the impurity concentration performed on the oxidesemiconductor films each of which has an island shape by processing.

Specifically, plasma treatment is performed on the island-shaped oxidesemiconductor films that are to be an oxide conductor film 148 a and anoxide conductor film 148 b functioning as the pixel electrode 148 toincrease oxygen vacancies in the oxide semiconductor films and/or toincrease impurities such as hydrogen and water in the oxidesemiconductor films, so that the oxide semiconductor films can have ahigh carrier density and a low resistance. On the other hand, over thetransistor 136, the insulating films 116 a and 116 b are provided toprevent the oxide semiconductor films 135 a and 135 b from being exposedto the above plasma treatment. In FIG. 6 , the insulating films 116 aand 116 b are provided so that their regions overlapping with the oxideconductor films 148 a and 148 b are selectively removed.

As the plasma treatment to be performed on the oxide conductor films 148a and 148 b, plasma treatment using a gas containing one or more of arare gas (He, Ne, Ar, Kr, or Xe), phosphorus, boron, hydrogen, andnitrogen is typically given. More specifically, plasma treatment in anAr atmosphere, plasma treatment in a mixed gas atmosphere of Ar andhydrogen, plasma treatment in an ammonia atmosphere, plasma treatment ina mixed gas atmosphere of Ar and ammonia, plasma treatment in a nitrogenatmosphere, or the like can be given.

Note that the pixel electrode 149 has a material and a stacked-layerstructure similar to those of the pixel electrode 148. In addition, inthe pixel 100 illustrated in FIG. 5 and FIG. 6 , the capacitor 145includes the capacitor wiring 105 a, the pixel electrode 148, and thegate insulating film 107 provided between the capacitor wiring 105 a andthe pixel electrode 148. Furthermore, the capacitor 146 includes thecapacitor wiring 105 b, the pixel electrode 149, and the gate insulatingfilm 107 provided between the capacitor wiring 105 b and the pixelelectrode 149.

Note that more specific structure and manufacturing method of thetransistor 136 will be described in Embodiment 2. When a transistorshown in Embodiment 2 is used for the pixel 100 described in thisembodiment, power consumption of the display device of one embodiment ofthe present invention can be reduced.

[Modification Example of Pixel Structure]

Structures of one pixel of a liquid crystal display device, which aredifferent from that of the above-described pixel 100, will be describedbelow with reference to FIG. 7 to FIG. 9 .

FIG. 7(A) is atop view of one pixel 300 of a liquid crystal displaydevice having a multi-domain structure, which is described in thisembodiment, and FIG. 7(B) is a circuit diagram of the pixel 300 in FIG.7(A).

As illustrated in FIG. 7(A) and FIG. 7(B), the pixel 300 includes a scanline 303 and a signal line 321 intersecting with the scan line 303. Thesignal line 321 has a region overlapping with a region between the pixelelectrode 339 a and the pixel electrode 339 b. In addition, a capacitorwiring 305 a and a capacitor wiring 305 b which extend in the samedirection as the signal line 321 are included. That is, the signal line321 does not have a region overlapping with the capacitor wiring 305 aand the capacitor wiring 305 b. Note that the capacitor wiring 305 a andthe capacitor wiring 305 b are electrically connected to the pixelelectrode 339 a and the pixel electrode 339 b, respectively.Furthermore, the scan line 321 is provided between the capacitor wiring305 a and the capacitor wiring 305 b.

In addition, a transistor 336 and a transistor 337 are provided in thevicinity of the intersection portion of the scan line 303 and the signalline 321. The transistor 336 includes a semiconductor film 335overlapping with the scan line 303, and a sixth electrode 323 a and aseventh electrode 325 a which overlap with the semiconductor film 335.The sixth electrode 323 a is electrically connected to the signal line321. The sixth electrode 323 a serves as one of a source electrode and adrain electrode in the transistor 336. The seventh electrode 325 aserves as the other of the source electrode and the drain electrode inthe transistor 336.

The transistor 337 includes the semiconductor film 335 overlapping withthe scan line 303, and an eighth electrode 323 b and a ninth electrode325 b which overlap with the semiconductor film 335. The eighthelectrode 323 b is electrically connected to the signal line 321. Theeighth electrode 323 b serves as one of a source electrode and a drainelectrode in the transistor 337. The ninth electrode 325 b serves as theother of the source electrode and the drain electrode in the transistor337.

The seventh electrode 325 a included in the transistor 336 iselectrically connected to a pixel electrode 339 a through an opening 344a. In other words, the transistor 336 is connected to a liquid crystalelement 342 including the pixel electrode 339 a through the seventhelectrode 325 a. Furthermore, one electrode of a capacitor 340 iselectrically connected to the pixel electrode 339 a and the seventhelectrode 325 a of the transistor 336, and the other electrode 345 a iselectrically connected to the capacitor wiring 305 a through an opening346 a.

The ninth electrode 325 b included in the transistor 337 is electricallyconnected to a pixel electrode 339 b through an opening 344 b. In otherwords, the transistor 337 is connected to a liquid crystal element 343including the pixel electrode 339 b through the ninth electrode 325 b.One electrode of a capacitor 341 is electrically connected to the pixelelectrode 339 b and the ninth electrode 325 b of the transistor 337, andthe other electrode 345 b is electrically connected to the capacitorwiring 305 b through an opening 346 b.

Note that the opening 344 a and the opening 344 b are provided in aninsulating film 316 described later. The opening 346 a and the opening346 b are provided in a gate insulating film 307 described later. Inaddition, to avoid complexity of the drawing, in FIG. 7(A), onlyoutlines of top surface shapes of the pixel electrode 339 a and thepixel electrode 339 b are denoted by dashed lines without usinghatching.

The transistor 336 and the transistor 337 are located almost at thecenter of the pixel 300 in the top surface shape and formed between thepixel electrode 339 a and the pixel electrode 339 b each of which is asubpixel of the pixel 300.

In the transistor 336 and the transistor 337, the sixth electrode 323 aand the eighth electrode 323 b, each of which is one of the sourceelectrode and the drain electrode, overlap with the scan line 303 in aportion where the signal line 321 and the scan line 303 overlap witheach other. With such a structure, in one pixel 300 included in thedisplay element, parasitic capacitance generated between one electrodeof each of the transistor 336 and the transistor 337 and the scan line303 can be reduced. Furthermore, in the transistor 336 and thetransistor 337, the seventh electrode 325 a and the ninth electrode 325b, each of which is the other of the source electrode and the drainelectrode, overlap with the scan line 303.

Note that as illustrated in FIG. 7(B), in the transistor 336, parasiticcapacitance C21 is generated in a portion where the scan line 303 andthe seventh electrode 325 a overlap with each other. Furthermore, in thetransistor 337, parasitic capacitance C22 is generated in a portionwhere the scan line 303 and the ninth electrode 325 b overlap with eachother. In addition, parasitic capacitance C25 is generated in a portionwhere the signal line 321 and the scan line 303 overlap with each other.Since the sixth electrode 323 a and the eighth electrode 323 b overlapwith the scan line 303 in a portion where the signal line 321 and thescan line 303 overlap with each other, parasitic capacitance generatedin a portion where the sixth electrode 323 a and the eighth electrode323 b overlap with the scan line 303 is contained in the above-describedparasitic capacitance C25.

Here, the pixel 300 including the transistor 336 and the transistor 337is compared with the pixel 100 including the transistor 136 and thetransistor 137. Since the area of a portion where the seventh electrode325 a and the scan line 303 overlap with each other is larger than thearea of the portion where the second electrode 125 a and the scan line103 overlap with each other, the parasitic capacitance C21 is largerthan the parasitic capacitance C1. In addition, since the area of aportion where the ninth electrode 325 b and the scan line 303 overlapwith each other is larger than the area of the portion where the thirdelectrode 125 b and the scan line 103 overlap with each other, theparasitic capacitance C22 is larger than the parasitic capacitance C2.Furthermore, when the area of a portion where the scan line 303 and thesignal line 321 overlap with each other and the area of the portionwhere the scan line 103 and the signal line 121 overlap with each otherare substantially the same, the parasitic capacitance C25 and theparasitic capacitance C5 are substantially the same.

In the pixel 100, the parasitic capacitance C6 and the parasiticcapacitance C7 are respectively generated in the portions where thesignal line 121 overlaps with the capacitor wiring 105 a and thecapacitor wiring 105 b. In contrast, in the pixel 300, the signal line321 does not have a region overlapping with the capacitor wiring 305 aand the capacitor wiring 305 b; thus, parasitic capacitance is notgenerated between the signal line 321 and the capacitor wiring 305 a andbetween the signal line 321 and the capacitor wiring 305 b.

In the liquid crystal display device including a plurality of pixels,parasitic capacitance which causes delay of signal transmission of asignal line has less influence on delay of signal transmission when theparasitic capacitance is generated closer to the end through atransistor in a signal transmission path. For example, in the pixel 100,the parasitic capacitance C1 generated in the portion where the scanline 103 and the second electrode 125 a overlap with each other has lessinfluence on delay of signal transmission of the signal line 121 thanthe parasitic capacitance C6 generated in the portion where the signalline 121 and the capacitor wiring 105 a overlap with each other. This isbecause, in the liquid crystal display device, while signal transmissionis influenced by the addition of the parasitic capacitance C6 times thenumber of capacitor wirings that overlap with one signal line 121, theparasitic capacitance C1 influences the signal transmission when onetransistor 136 connected to one signal line 121 is turned on.Accordingly, the pixel 300 has larger parasitic capacitance than thepixel 100 by differences between the parasitic capacitance C21 and theparasitic capacitance C1 and between the parasitic capacitance C22 andthe parasitic capacitance C2; however, the parasitic capacitance C6 andthe parasitic capacitance C7, which are generated in the pixel 100, arenot generated, so that the parasitic capacitance which causes delay ofsignal transmission of the signal line included in the liquid crystaldisplay device can be reduced.

Note that as illustrated in FIG. 7(C), the end portion of thesemiconductor film 335 may be extended in the direction in which thesignal line 321 extends and the seventh electrode 325 a and the ninthelectrode 325 b may be provided such that the areas of the portion wherethe seventh electrode 325 a and the scan line 303 overlap with eachother and the portion where the ninth electrode 325 b and the scan line303 overlap with each other are small. With such a structure, theabove-described parasitic capacitance C21 and parasitic capacitance C22can be reduced. Alternatively, as illustrated in FIG. 7(D), thesemiconductor film 335 may be provided so that the end portions of thesemiconductor film 335 are located outward from the portion where thesignal line 321 and the scan line 303 overlap with each other in the topview. The semiconductor film 335 is formed, in addition to the gateinsulating film 307, between the signal line 321 and the scan line 303,whereby the parasitic capacitance generated in the portion where thesignal line 321 and the scan line 303 overlap with each other can bereduced in some cases.

Alternatively, as illustrated in FIG. 8(A) and FIG. 8(B), the pixel 300may have a structure where the capacitor wiring 305 a and the capacitorwiring 305 b are each shared with an adjacent pixel. With such astructure, the number of capacitor wirings included in the displaydevice can be reduced. Furthermore, when the area of a portion where thepixel electrode 339 a and the capacitor wiring 305 a overlap with eachother is increased, the capacitance of the capacitor 340 can beincreased as illustrated in FIG. 8(A). Similarly, when the area of aportion where the pixel electrode 339 b and the capacitor wiring 305 bis increased, the capacitance of the capacitor 341 can be increased.

Next, structures of the transistor and the capacitor included in thepixel 300 will be described with reference to FIG. 9 .

FIG. 9 is a cross-sectional structure of the transistor 336 and thecapacitor 340 taken along dashed-dotted line C-D shown in FIG. 7(A).

The transistor 336 includes, over a substrate 301, the scan line 303,the semiconductor film 335, a gate insulating film 307 provided betweenthe scan line 303 and the semiconductor film 335, the sixth electrode323 a in contact with the semiconductor film 335, and the seventhelectrode 325 a in contact with the semiconductor film 335.

The capacitor 340 includes, over the substrate 301, the electrode 345 a,the seventh electrode 325 a, and the gate insulating film 307 providedbetween the electrode 345 a and the seventh electrode 325 a.

In addition, over the gate insulating film 307, the capacitor wiring 305a that is electrically connected to the electrode 345 a through theopening 346 a provided in the gate insulating film 307 is provided. Aninsulating film 316 is provided over the gate insulating film 307, thesemiconductor film 335, the sixth electrode 323 a, the seventh electrode325 a, and the capacitor wiring 305 a. The pixel electrode 339 a whichis electrically connected to the seventh electrode 325 a through theopening 344 a provided in the insulating film 316 is provided over theinsulating film 316.

Although not illustrated, the transistor 337 has a structure similar tothat of the transistor 336. Furthermore, the capacitor 341 has astructure similar to that of the capacitor 340.

Layers forming the transistor 336 and the capacitor 340 have materialsand stacked-layer structures similar to those of the layers forming thetransistor 136 and the capacitor 140. Furthermore, the insulating film316 and the pixel electrode 339 a can be formed using materials similarto those of the insulating film 116 and the pixel electrode 139 a.Furthermore, the electrode 345 a and the capacitor wiring 305 a can beformed using materials similar to those of the scan line 303 and thesixth electrode 323 a.

Note that a more specific structure and manufacturing method of thetransistor 336 will be described in Embodiment 2. When a transistorshown in Embodiment 2 is used for the pixel 300 described in thisembodiment, power consumption of the display device of one embodiment ofthe present invention can be reduced.

When the pixel 100 or the pixel 300 described in this embodiment isincluded in the liquid crystal display device having a multi-domainstructure, the parasitic capacitance generated between the scan line andthe signal line, that is, between the scan line serving as the gateelectrode of the transistor and the signal line serving as one of thesource electrode and the drain electrode of the transistor, can bereduced. In addition, when the pixel 300 described in this embodiment isincluded in the liquid crystal display device having a multi-domainstructure, the parasitic capacitance generated between the signal lineand the capacitor wiring can be reduced. Thus, display quality can beimproved in, in particular, a large-sized liquid crystal display device,a liquid crystal display device capable of high-speed operation, and aliquid crystal display device with high resolution. In addition, powerconsumption of the liquid crystal display device can be reduced.

Note that the structure where one pixel is provided with two transistorsis shown in this embodiment; however, one embodiment of the presentinvention is not limited thereto. One pixel may be provided with threeor more transistors and a plurality of pixel electrodes connected to thetransistors.

The structure described in this embodiment can be used in appropriatecombination with the structure described in other embodiments.

Embodiment 2

In this embodiment, a semiconductor device that is one embodiment of thepresent invention and a method for manufacturing the semiconductordevice will be described with reference to FIG. 10 to FIG. 18 .

Structure Example 1 of Semiconductor Device

FIG. 14(C) is a top view of a transistor 500 that is a semiconductordevice of one embodiment of the present invention. FIG. 14(B)corresponds to a cross-sectional view of a section plane taken alongdashed-dotted line X1-X2 and a cross-sectional view of a section planetaken along dashed-dotted line Y1-Y2 in FIG. 14(C). Note that FIG. 10(A)to FIG. 14(A) are cross-sectional views illustrating a manufacturingprocess of the transistor 500 in FIG. 14(B).

Note that in FIG. 14(C), some components of the transistor 500 (e.g., aninsulating film functioning as a gate insulating film) are notillustrated to avoid complexity. The direction of dashed-dotted lineX1-X2 may be called a channel length direction, and the direction ofdashed-dotted line YT-Y2 may be called a channel width direction. As inFIG. 14(C), some components are not illustrated in some cases in topviews of transistors in drawings described below.

The transistor 500 includes the conductive film 504 functioning as thegate electrode over the substrate 502, the insulating film 506 over thesubstrate 502 and the conductive film 504, the insulating film 507 overthe insulating film 506, an oxide semiconductor film 508 over theinsulating film 507, the conductive film 512 a functioning as a sourceelectrode electrically connected to the oxide semiconductor film 508,and the conductive film 512 b functioning as a drain electrodeelectrically connected to the oxide semiconductor film 508. Over thetransistor 500, specifically, over the conductive films 512 a and 512 band the oxide semiconductor film 508, the insulating films 514 and 516and the insulating film 518 are provided. The insulating films 514, 516,and 518 function as protective insulating films for the transistor 500.The insulating film 514 and the insulating film 516 are referred to as afirst protective insulating film and a second protective insulatingfilm, respectively, in some cases.

The oxide semiconductor film 508 includes the first oxide semiconductorfilm 508 a on the conductive film 504 side and the second oxidesemiconductor film 508 b over the first oxide semiconductor film 508 a.Furthermore, the insulating film 506 and the insulating film 507function as gate insulating films of the transistor 500.

For the oxide semiconductor film 508, an In-M (M is aluminum, gallium,yttrium, or tin) oxide or an In-M-Zn oxide can be used. It isparticularly preferable to use an In-M-Zn oxide for the oxidesemiconductor film 508.

In addition, the first oxide semiconductor film 508 a preferablycontains an oxide with a composition in which an atomic proportion of Inis higher than an atomic proportion of M by a larger difference than inthe composition of an oxide contained in the second oxide semiconductorfilm 508 b.

When the first oxide semiconductor film 508 a has a composition in whichthe atomic proportion of In is higher than that of M, the field-effectmobility (also simply referred to as mobility or FE) of the transistor500 can be improved. Specifically, the field-effect mobility of thetransistor 500 can be higher than 10 cm²/Vs, and preferably, thefield-effect mobility of the transistor 500 can be higher than 30cm²/Vs.

For example, the use of the transistor with high field-effect mobilityfor a gate driver that generates a gate signal (specifically, ademultiplexer connected to an output terminal of a shift registerincluded in a gate driver) allows a semiconductor device or a displaydevice to have a narrow frame.

Note that when the first oxide semiconductor film 508 a has acomposition in which the atomic proportion of In is higher than that ofM, the electrical characteristics of the transistor 500 are easilychanged by light irradiation. However, in the semiconductor device ofone embodiment of the present invention, the second oxide semiconductorfilm 508 b is formed over the first oxide semiconductor film 508 a. Theatomic proportion of In in the second oxide semiconductor film 508 b islower than that in the first oxide semiconductor film 508 a, and thusthe second oxide semiconductor film 508 b has a larger band gap E_(g)than the first oxide semiconductor film 508 a. For this reason, theoxide semiconductor film 508 which is a layered structure of the firstoxide semiconductor film 508 a and the second oxide semiconductor film508 b has high resistance to a negative bias stress test with lightirradiation.

In light irradiation, the amount of light absorbed by the oxidesemiconductor film 508 having the above layered structure can bereduced. As a result, a change in the electrical characteristics of thetransistor 500 due to light irradiation can be reduced.

When oxygen vacancy is formed in the oxide semiconductor film 508included in the transistor 500, electrons serving as carriers aregenerated; as a result, the transistor 500 tends to be normally on. Notethat a normally-on transistor refers to a transistor in which current(e.g., current between a drain and a source (Ids)) flows at a gatevoltage V_(g)=0 V. Therefore, for stable transistor characteristics, itis important to reduce oxygen vacancy in the oxide semiconductor film508, particularly oxygen vacancy in the first oxide semiconductor film508 a. In the structure of the transistor of one embodiment of thepresent invention, excess oxygen is introduced into an insulating filmover the oxide semiconductor film 508, here, the insulating film 514and/or the insulating film 516 over the oxide semiconductor film 508,whereby oxygen is moved from the insulating film 514 and/or theinsulating film 516 to the oxide semiconductor film 508 to fill oxygenvacancy in the oxide semiconductor film 508, particularly in the firstoxide semiconductor film 508 a. Alternatively, excess oxygen isintroduced into the insulating film 516 in the formation of a firstbarrier film 531 to be formed over the insulating film 516, and oxygenis moved from the insulating film 516 to the oxide semiconductor film508 to fill oxygen vacancy in the oxide semiconductor film 508,particularly in the first oxide semiconductor film 508 a.

It is preferable that the insulating films 514 and 516 each include aregion (oxygen-excess region) including oxygen in excess of that in thestoichiometric composition. In other words, the insulating films 514 and516 are insulating films capable of releasing oxygen. Note that theoxygen-excess region is formed in the insulating films 514 and 516 insuch a manner that oxygen is introduced into the insulating films 514and 516 after the deposition, for example. As a method for introducingoxygen, an ion implantation method, an ion doping method, a plasmaimmersion ion implantation method, plasma treatment, or the like may beemployed.

In order to fill oxygen vacancy in the first oxide semiconductor film508 a, a channel region in the second oxide semiconductor film 508 b andits vicinity preferably have a small thickness. For example, thethickness of the channel region in the second oxide semiconductor film508 b and its vicinity is preferably greater than or equal to 1 nm andless than or equal to 20 nm, further preferably greater than or equal to3 nm and less than or equal to 10 nm.

Furthermore, in order to fill oxygen vacancy in the first oxidesemiconductor film 508 a, the second oxide semiconductor film 508 bpreferably has high oxygen permeability. When the second oxidesemiconductor film 508 b has high oxygen permeability, excess oxygen inthe insulating films 514 and 516 can be favorably transmitted throughthe first oxide semiconductor film 508 a.

As described above, in a semiconductor device of one embodiment of thepresent invention, an oxide semiconductor film has a layered structureand an insulating film in contact with the oxide semiconductor filmcontains excess oxygen; thus, the reliability of the semiconductordevice can be high. Furthermore, in one embodiment of the presentinvention, the temperature in the manufacturing process of thesemiconductor device can be low (typically, lower than 400° C. or lowerthan 375° C. (preferably, higher than or equal to 340° C. and lower thanor equal to 360° C.)). Note that the manufacturing process of thesemiconductor device will be described later.

Other components of the semiconductor device of this embodiment will bedescribed below in detail.

<Substrate>

There is no particular limitation on a material and the like of thesubstrate 502 as long as the material has heat resistance high enough towithstand at least heat treatment performed later. For example, a glasssubstrate, a ceramic substrate, a quartz substrate, a sapphiresubstrate, or the like may be used as the substrate 502. Alternatively,a single crystal semiconductor substrate or a polycrystallinesemiconductor substrate made of silicon, silicon carbide, or the like, acompound semiconductor substrate made of silicon germanium or the like,an SOI substrate, or the like may be used as the substrate 502. Stillalternatively, any of these substrates provided with a semiconductorelement may be used as the substrate 502. In the case where a glasssubstrate is used as the substrate 502, a glass substrate having any ofthe following sizes can be used: the 6th generation, the 7th generation,the 8th generation, the 9th generation, and the 10th generation. Thus, alarge-sized display device can be manufactured. Such a large-sizedsubstrate is preferably used because manufacturing cost can be reduced.

Alternatively, a flexible substrate may be used as the substrate 502,and the transistor 500 may be provided directly on the flexiblesubstrate. Alternatively, a separation layer may be provided between thesubstrate 502 and the transistor 500. The separation layer can be usedwhen part or the whole of a semiconductor device formed over theseparation layer is separated from the substrate 502 and transferredonto another substrate. In such a case, the transistor 500 can betransferred to a substrate having low heat resistance or a flexiblesubstrate as well.

<Conductive Films Functioning as Gate Electrode and Source and DrainElectrodes>

The conductive film 504 functioning as the gate electrode, theconductive film 512 a functioning as the source electrode, and theconductive film 512 b functioning as the drain electrode can each beformed using a metal element selected from chromium (Cr), copper (Cu),aluminum (Al), gold (Au), silver (Ag), zinc (Zn), molybdenum (Mo),tantalum (Ta), titanium (Ti), tungsten (W), manganese (Mn), nickel (Ni),iron (Fe), and cobalt (Co); an alloy including any of these metalelement as its component; an alloy including a combination of any ofthese metal elements; or the like.

Furthermore, the conductive films 504, 512 a, and 512 b may have asingle-layer structure or a layered structure of two or more layers. Forexample, a single-layer structure of an aluminum film containingsilicon, a two-layer structure in which a titanium film is stacked overan aluminum film, a two-layer structure in which a titanium film isstacked over a titanium nitride film, a two-layer structure in which atungsten film is stacked over a titanium nitride film, a two-layerstructure in which a tungsten film is stacked over a tantalum nitridefilm or a tungsten nitride film, a three-layer structure in which atitanium film, an aluminum film, and a titanium film are stacked in thisorder, and the like can be given. Alternatively, an alloy film or anitride film which contains aluminum and one or more elements selectedfrom titanium, tantalum, tungsten, molybdenum, chromium, neodymium, andscandium may be used.

The conductive films 504, 512 a, and 512 b can be formed using alight-transmitting conductive material such as indium tin oxide, indiumoxide containing tungsten oxide, indium zinc oxide containing tungstenoxide, indium oxide containing titanium oxide, indium tin oxidecontaining titanium oxide, indium zinc oxide, or indium tin oxide towhich silicon oxide is added.

A Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) may be usedfor the conductive films 504, 512 a, and 512 b. The use of a Cu—X alloyfilm enables the manufacturing cost to be reduced because wet etchingprocess can be used in the processing.

<Insulating Films Functioning as Gate Insulating Films>

As each of the insulating film 506 and the insulating film 507functioning as gate insulating films of the transistor 500, aninsulating film including at least one of the following films formed bya plasma enhanced chemical vapor deposition (PECVD) method, a sputteringmethod, or the like can be used: a silicon oxide film, a siliconoxynitride film, a silicon nitride oxide film, a silicon nitride film,an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, azirconium oxide film, a gallium oxide film, a tantalum oxide film, amagnesium oxide film, a lanthanum oxide film, a cerium oxide film, and aneodymium oxide film. Note that instead of a layered structure of theinsulating film 506 and the insulating film 507, an insulating film of asingle layer formed using a material selected from the above or aninsulating film of three or more layers may be used.

The insulating film 506 functions as a blocking film which inhibitspenetration of oxygen. For example, in the case where excess oxygen issupplied to the insulating film 507, the insulating film 114, theinsulating film 516, and/or the oxide semiconductor film 508, theinsulating film 506 can inhibit penetration of oxygen.

Note that the insulating film 507 that is in contact with the oxidesemiconductor film 508 functioning as a channel region of the transistor500 is preferably an oxide insulating film and preferably includes aregion including oxygen in excess of that in the stoichiometriccomposition (oxygen-excess region). In other words, the insulating film507 is an insulating film which is capable of releasing oxygen. In orderto provide the oxygen-excess region in the insulating film 507, theinsulating film 507 is formed in an oxygen atmosphere, for example.Alternatively, the oxygen-excess region may be formed by introduction ofoxygen into the insulating film 507 after the deposition. As a methodfor introducing oxygen, an ion implantation method, an ion dopingmethod, a plasma immersion ion implantation method, plasma treatment, orthe like may be employed.

In the case where hafnium oxide is used for the insulating film 507, thefollowing effect is attained. Hafnium oxide has a higher dielectricconstant than silicon oxide and silicon oxynitride. Therefore, theinsulating film 507 using hafnium oxide can have a larger thickness thanthe insulating film 507 using silicon oxide or silicon oxynitride; thus,leakage current due to tunnel current can below. That is, it is possibleto provide a transistor with a low off-state current. Moreover, hafniumoxide with a crystalline structure has a higher dielectric constant thanhafnium oxide with an amorphous structure. Therefore, it is preferableto use hafnium oxide with a crystalline structure in order to provide atransistor with a low off-state current. Examples of the crystallinestructure include a monoclinic crystal structure and a cubic crystalstructure. Note that one embodiment of the present invention is notlimited to the above examples.

In this embodiment, a silicon nitride film is formed as the insulatingfilm 506, and a silicon oxide film is formed as the insulating film 507.A silicon nitride film has a higher dielectric constant than a siliconoxide film and needs a larger thickness for capacitance equivalent tothat of a silicon oxide film. Thus, when a silicon nitride film is usedas the gate insulating film of the transistor 500, the physicalthickness of the insulating film can be increased. This makes itpossible to reduce a decrease in the withstand voltage of the transistor500 and furthermore to increase the withstand voltage, thereby reducingelectrostatic discharge damage to the transistor 500.

<Oxide Semiconductor Film>

The oxide semiconductor film 508 can be formed using any of thematerials described above. In the case where the oxide semiconductorfilm 508 includes an In-M-Zn oxide, it is preferable that the atomicratio of metal elements of a sputtering target used for forming theIn-M-Zn oxide satisfy In M and Zn M. As the atomic ratio of metalelements of such a sputtering target, In:M:Zn=1:1:1, InM:Zn=1:1:1.2,In:M:Zn=2:1:3, In:M:Zn=3:1:2, and In:M:Zn=4:2:4.1 are preferable. In thecase where the oxide semiconductor film 508 includes an In-M-Zn oxide,it is preferable to use a target including a polycrystalline In-M-Znoxide as the sputtering target. With the use of the target including apolycrystalline In-M-Zn oxide, the oxide semiconductor film 508 havingcrystallinity can be easily formed. Note that the atomic ratio of metalelements of the deposited oxide semiconductor film 508 varies from theabove atomic ratio of metal elements of the sputtering target within arange of ±40% as an error. For example, when a sputtering target with anatomic ratio of In:Ga:Zn=4:2:4.1 is used, the atomic ratio of In to Gaand Zn in the oxide semiconductor film 508 may be approximately 4:2:3.

The first oxide semiconductor film 508 a can be formed using thesputtering target having anatomic ratio of In:M:Zn=2:1:3, In:M:Zn=3:1:2,In:M:Zn=4:2:4.1, or the like. It is preferable that the first oxidesemiconductor film 508 a have an atomic ratio ofIn:M:Zn=4:α1(1.5≤α1≤2.5):α2(2.5≤α2≤3.5).

The second oxide semiconductor film 508 b can be formed using thesputtering target having an atomic ratio of In:M:Zn=1:1:1,In:M:Zn=1:1:1.2, or the like. It is preferable that the second oxidesemiconductor film 508 b have an atomic ratio of InM:Zn=1:β1(0.8≤β1≤1.2):β2(0.8≤β2≤1.2). Note that the atomic ratio ofmetal elements in the sputtering target used for forming the secondoxide semiconductor film 508 b does not necessarily satisfy In ≥M andZn≥M, and may satisfy In<M and/or Zn<M For example, the sputteringtarget can have an atomic ratio of In:M:Zn=1:3:2, In:M:Zn=1:3:4, orIn:M:Zn=1:3:6.

The energy gap of the oxide semiconductor film 508 is 2 eV or more,preferably 2.5 eV or more, further preferably 3 eV or more. With the useof an oxide semiconductor having such a wide energy gap, the off-statecurrent of the transistor 500 can be reduced. In particular, an oxidesemiconductor film having an energy gap more than or equal to 2.0 eV,preferably more than or equal to 2.0 eV and less than or equal to 3.0 eVis preferably used as the first oxide semiconductor film 508 a, and anoxide semiconductor film having an energy gap more than or equal to 2.5eV and less than or equal to 3.5 eV is preferably used as the secondoxide semiconductor film 508 b. Furthermore, the energy gap of thesecond oxide semiconductor film 508 b is preferably larger than that ofthe first oxide semiconductor film 508 a.

The thickness of each of the first oxide semiconductor film 508 a andthe second oxide semiconductor film 508 b is greater than or equal to 3nm and less than or equal to 200 nm, preferably greater than or equal to3 nm and less than or equal to 100 nm, further preferably greater thanor equal to 3 nm and less than or equal to 50 nm.

An oxide semiconductor film with a low carrier density is used as thefirst oxide semiconductor film 508 a. For example, the carrier densityof the first oxide semiconductor film 508 a is lower than 8×10¹¹/cm³,preferably lower than 1×10¹¹/cm³, further preferably lower than1×10¹⁰/cm³, and is 1×10⁻⁹/cm³ or higher. An oxide semiconductor filmwith a low carrier density is used as the second oxide semiconductorfilm 508 b. For example, the carrier density of the second oxidesemiconductor film 508 b is 1×10¹⁷/cm³ or lower, preferably 1×10¹⁵/cm³or lower, further preferably 1×10¹³/cm³ or lower, still furtherpreferably 1×10¹¹/cm³ or lower.

Note that the composition is not limited to the above, and it ispossible to use an oxide semiconductor film with an appropriatecomposition depending on required semiconductor characteristics andelectrical characteristics (e.g., field-effect mobility and thresholdvoltage) of a transistor. Further, in order to obtain requiredsemiconductor characteristics of a transistor, it is preferable that thecarrier density, the impurity concentration, the defect density, theatomic ratio of a metal element to oxygen, the interatomic distance, thedensity, and the like of each of the first oxide semiconductor film 508a and the second oxide semiconductor film 508 b be set to be appropriatevalues.

Note that it is preferable to use, as each of the first oxidesemiconductor film 508 a and the second oxide semiconductor film 508 b,an oxide semiconductor film in which the impurity concentration is lowand the density of defect states is low, in which case the transistorcan have more excellent electrical characteristics. Here, the state inwhich the impurity concentration is low and the density of defect statesis low (the number of oxygen vacancies is small) is referred to as“highly purified intrinsic” or “substantially highly purifiedintrinsic”. A highly purified intrinsic or substantially highly purifiedintrinsic oxide semiconductor film has few carrier generation sources,and thus can have a low carrier density. Thus, a transistor in which achannel region is formed in the oxide semiconductor film rarely has anegative threshold voltage (is rarely normally on). A highly purifiedintrinsic or substantially highly purified intrinsic oxide semiconductorfilm has a low density of defect states and accordingly has a lowdensity of trap states in some cases. Furthermore, a highly purifiedintrinsic or substantially highly purified intrinsic oxide semiconductorfilm has an extremely low off-state current. The off-state current of anelement having a channel width of 1×10⁶ μm and a channel length L of 10μm can be less than or equal to the measurement limit of a semiconductorparameter analyzer, i.e., less than or equal to 1×10⁻¹³ A at a voltagebetween a source electrode and a drain electrode (drain voltage) of 1Vto 10V.

Accordingly, the transistor in which the channel region is formed in thehighly purified intrinsic or substantially highly purified intrinsicoxide semiconductor film can have a small variation in electricalcharacteristics and high reliability. Charges trapped by the trap statesin the oxide semiconductor film take a long time to be released and maybehave like fixed charges. Thus, the transistor whose channel region isformed in the oxide semiconductor film having a high density of trapstates has unstable electrical characteristics in some cases. Examplesof impurities are hydrogen, nitrogen, alkali metal, and alkaline earthmetal.

Hydrogen contained in the oxide semiconductor film reacts with oxygenbonded to a metal atom to form water, and also causes oxygen vacanciesin a lattice from which oxygen is released (or a portion from whichoxygen is released). Due to entry of hydrogen into the oxygen vacancies,electrons serving as carriers are generated in some cases. Furthermore,in some cases, bonding of part of hydrogen to oxygen bonded to a metalatom causes generation of an electron serving as a carrier. Thus, atransistor including an oxide semiconductor film which contains hydrogenis likely to be normally on. Accordingly, it is preferable that hydrogenbe reduced as much as possible in the oxide semiconductor film 508.Specifically, the hydrogen concentration in the oxide semiconductor film508, which is measured by SIMS, is lower than or equal to 2×10²⁰atoms/cm³, preferably lower than or equal to 5×10¹⁹ atoms/cm³, furtherpreferably lower than or equal to 1×10¹⁹ atoms/cm³, still furtherpreferably lower than or equal to 5×10¹⁸ atoms/cm³, yet furtherpreferably lower than or equal to 1×10¹⁸ atoms/cm³, even furtherpreferably lower than or equal to 5×10¹⁷ atoms/cm³, or furtherpreferably lower than or equal to 1×10¹⁶ atoms/cm³.

The first oxide semiconductor film 508 a preferably includes a regionhaving lower hydrogen concentration than the second oxide semiconductorfilm 508 b. When the first oxide semiconductor film 508 a includes theregion having lower hydrogen concentration than the second oxidesemiconductor film 508 b, the semiconductor device can be highlyreliable.

When silicon or carbon that is one of elements belonging to Group 14 iscontained in the first oxide semiconductor film 508 a, oxygen vacanciesare increased in the first oxide semiconductor film 508 a, and the firstoxide semiconductor film 508 a becomes an n-type film. Thus, theconcentration of silicon or carbon in the first oxide semiconductor film508 a or the concentration of silicon or carbon in the vicinity of aninterface with the first oxide semiconductor film 508 a (theconcentration is measured by SIMS) is set to be lower than or equal to2×10¹⁸ atoms/cm³, preferably lower than or equal to 2×10¹⁷ atoms/cm³.

In addition, the concentration of alkali metal or alkaline earth metalin the first oxide semiconductor film 508 a, which is measured by SIMS,is lower than or equal to 1×10¹⁸ atoms/cm³, preferably lower than orequal to 2×10¹⁶ atoms/cm³. Alkali metal and alkaline earth metal mightgenerate carriers when bonded to an oxide semiconductor, in which casethe off-state current of the transistor might be increased. Therefore,it is preferable to reduce the concentration of alkali metal or alkalineearth metal in the first oxide semiconductor film 508 a.

Furthermore, when including nitrogen, the first oxide semiconductor film508 a easily becomes n-type by generation of electrons serving ascarriers and an increase of carrier density. Thus, a transistorincluding an oxide semiconductor film which contains nitrogen is likelyto have normally-on characteristics. For this reason, nitrogen in theoxide semiconductor film is preferably reduced as much as possible. Forexample, the concentration of nitrogen which is measured by SIMS ispreferably set to be lower than or equal to 5×10¹⁸ atoms/cm³.

Each of the first oxide semiconductor film 508 a and the second oxidesemiconductor film 508 b may have a non-single-crystal structure, forexample. The non-single-crystal structure includes a CAAC-OS (C AxisAligned Crystalline Oxide Semiconductor) which is described later, apolycrystalline structure, a microcrystalline structure, or an amorphousstructure, for example. Among the non-single-crystal structures, theamorphous structure has the highest density of defect states, whereasthe CAAC-OS has the lowest density of defect states.

Here, a band structure including the oxide semiconductor film 508 andthe insulating films in contact with the oxide semiconductor film 508 isdescribed with reference to FIG. 18 .

FIG. 18 shows an example of a band structure in the thickness directionof a stack including the insulating film 507, the first oxidesemiconductor film 508 a, the second oxide semiconductor film 508 b, andthe insulating film 514. For easy understanding, energy level of theconduction band minimum (E_(c)) of each of the insulating film 507, thefirst oxide semiconductor film 508 a, the second oxide semiconductorfilm 508 b, and the insulating film 514 is shown in the band structure.

In the band structure of FIG. 18 , a silicon oxide film is used as eachof the insulating films 507 and 514, an oxide semiconductor film formedusing a metal oxide target having an atomic ratio of metal elements ofIn:Ga:Zn=4:2:4.1 is used as the first oxide semiconductor film 508 a,and a metal oxide film formed using a metal oxide target having anatomic ratio of metal elements of In:Ga:Zn=1:1:1.2 is used as the secondoxide semiconductor film 508 b.

As illustrated in FIG. 18 , the energy level of the conduction bandminimum gradually varies between the first oxide semiconductor film 508a and the second oxide semiconductor film 508 b. In other words, theenergy level of the conduction band minimum is continuously varied orcontinuously connected. To obtain such a band structure, there exists noimpurity, which forms a defect state such as a trap center or arecombination center, at the interface between the first oxidesemiconductor film 508 a and the second oxide semiconductor film 508 b.

To form a continuous junction between the first oxide semiconductor film508 a and the second oxide semiconductor film 508 b, the films areformed successively without exposure to the air by using a multi-chamberdeposition apparatus (sputtering apparatus) provided with a load lockchamber.

With the band structure of FIG. 18 , the first oxide semiconductor film508 a serves as a well, and a channel region is formed in the firstoxide semiconductor film 508 a in the transistor with the layeredstructure.

In the case where the second oxide semiconductor film 508 b is notprovided, trap states might be formed in the first oxide semiconductorfilm 508 a. However, in the above layered structure, the trap states canbe formed in the second oxide semiconductor film 508 b. Thus, the trapstates can be distanced away from the first oxide semiconductor film 508a.

In addition, the trap states might be more distant from the vacuum levelthan the energy level of the conduction band minimum (E_(c)) of thefirst oxide semiconductor film 508 a functioning as a channel region, sothat electrons are likely to be accumulated in the trap states. When theelectrons are accumulated in the trap states, the electrons becomenegative fixed electric charge, so that the threshold voltage of thetransistor is shifted in the positive direction. Therefore, it ispreferable that the energy level of the trap states be closer to thevacuum level than the energy level of the conduction band minimum(E_(c)) of the first oxide semiconductor film 508 a. Such a structureinhibits accumulation of electrons in the trap states. As a result, theon-state current and the field-effect mobility of the transistor can beincreased.

In FIG. 18 , the energy level of the conduction band minimum of thesecond oxide semiconductor film 508 b is closer to the vacuum level thanthat of the first oxide semiconductor film 508 a. Typically, adifference in energy level between the conduction band minimum of thefirst oxide semiconductor film 508 a and the conduction band minimum ofthe second oxide semiconductor film 508 b is 0.15 eV or more or 0.5 eVor more and 2 eV or less or 1 eV or less. That is, the differencebetween the electron affinity of the second oxide semiconductor film 508b and the electron affinity of the first oxide semiconductor film 508 ais 0.15 eV or more or 0.5 eV or more and 2 eV or less or 1 eV or less.

In such a structure, the first oxide semiconductor film 508 a serves asa main path of current and functions as a channel region. In addition,since the second oxide semiconductor film 508 b includes one or moremetal elements included in the first oxide semiconductor film 508 a inwhich a channel region is formed, interface scattering is less likely tooccur at the interface between the first oxide semiconductor film 508 aand the second oxide semiconductor film 508 b. Thus, the transistor canhave high field-effect mobility because the movement of carriers is nothindered at the interface.

To prevent the second oxide semiconductor film 508 b from functioning aspart of a channel region, a material having sufficiently lowconductivity is used for the second oxide semiconductor film 508 b.Alternatively, a material which has a smaller electron affinity (adifference in energy level between the vacuum level and the conductionband minimum) than the first oxide semiconductor film 508 a and has adifference in energy level in the conduction band minimum from the firstoxide semiconductor film 508 a (band offset) is used for the secondoxide semiconductor film 508 b. Furthermore, to inhibit generation of adifference between threshold voltages due to the value of the drainvoltage, it is preferable to form the second oxide semiconductor film508 b using a material whose energy level of the conduction band minimumis closer to the vacuum level than that of the first oxide semiconductorfilm 508 a by 0.2 eV or more, preferably 0.5 eV or more.

It is preferable that the second oxide semiconductor film 508 b not havea spinel crystal structure. This is because if the second oxidesemiconductor film 508 b has a spinel crystal structure, constituentelements of the conductive films 512 a and 512 b might be diffused intothe first oxide semiconductor film 508 a at the interface between thespinel crystal structure and another region. Note that the second oxidesemiconductor film 508 b is preferably a CAAC-OS, which is describedlater, in which case a higher blocking property against constituentelements of the conductive films 512 a and 512 b, for example, a copperelement, is obtained.

The thickness of the second oxide semiconductor film 508 b is largeenough to inhibit diffusion of the constituent elements of theconductive films 512 a and 512 b into the oxide semiconductor film 508 band small enough not to inhibit supply of oxygen from the insulatingfilm 514 to the oxide semiconductor film 508 b. For example, when thethickness of the second oxide semiconductor film 508 b is greater thanor equal to 10 nm, diffusion of the constituent elements of theconductive films 512 a and 512 b into the first oxide semiconductor film508 a can be inhibited. When the thickness of the second oxidesemiconductor film 508 b is less than or equal to 100 nm, oxygen can beeffectively supplied from the insulating films 514 and 516 to the firstoxide semiconductor film 508 a.

<Insulating Films Functioning as Protective Insulating Films forTransistor>

The insulating films 514 and 516 each have a function of supplyingoxygen to the oxide semiconductor film 508. The insulating film 518functions as a protective insulating film for the transistor 500. Theinsulating films 514 and 516 contain oxygen. Furthermore, the insulatingfilm 514 is an insulating film which is permeable to oxygen. Note thatthe insulating film 514 also functions as a film which relieves damageto the oxide semiconductor film 508 at the time of forming theinsulating film 516 in a later step.

A silicon oxide film, a silicon oxynitride film, or the like with athickness greater than or equal to 5 nm and less than or equal to 150nm, preferably greater than or equal to 5 nm and less than or equal to50 nm can be used as the insulating film 514.

In addition, it is preferable that the number of defects in theinsulating film 514 be small and typically, the spin densitycorresponding to a signal that appears at g=2.001 due to a dangling bondof silicon be lower than or equal to 3×10¹⁷ spins/cm³ by ESRmeasurement. This is because if the density of defects in the insulatingfilm 514 is high, oxygen is bonded to the defects and the amount ofoxygen that passes through the insulating film 514 is decreased.

Note that in the insulating film 514, all oxygen entering the insulatingfilm 514 from the outside does not move to the outside of the insulatingfilm 514 and some oxygen remains in the insulating film 514.Furthermore, movement of oxygen occurs in the insulating film 514 insome cases in such a manner that oxygen enters the insulating film 514and oxygen included in the insulating film 514 is moved to the outsideof the insulating film 514. When an oxide insulating film which cantransmit oxygen is formed as the insulating film 514, oxygen releasedfrom the insulating film 516 provided over the insulating film 514 canbe moved to the oxide semiconductor film 508 through the insulating film514.

The insulating film 514 can be formed using an oxide insulating filmhaving a low density of states due to nitrogen oxide. Note that thedensity of states due to nitrogen oxide can be formed between the energyof the valence band maximum (E_(v_os)) and the energy of the conductionband minimum (E_(c_os)) of the oxide semiconductor film. A siliconoxynitride film that releases less nitrogen oxide, an aluminumoxynitride film that releases less nitrogen oxide, or the like can beused as the oxide insulating film in which the density of states due tonitrogen oxide between E_(v_os) and E_(c_os) is low.

Note that a silicon oxynitride film that releases less nitrogen oxide isa film which releases more ammonia than the nitrogen oxide in thermaldesorption spectroscopy analysis; the number of ammonia moleculesreleased from the silicon oxynitride film is typically greater than orequal to 1×10¹⁸ molecules/cm³ and less than or equal to 5×10¹⁹molecules/cm³. Note that the number of ammonia molecules released from afilm is the number of ammonia molecules released by heat treatment withwhich the surface temperature of the film becomes higher than or equalto 50° C. and lower than or equal to 650° C., preferably higher than orequal to 50° C. and lower than or equal to 550° C.

Nitrogen oxide (NO_(x); x is greater than or equal to 0 and less than orequal to 2, preferably greater than or equal to 1 and less than or equalto 2), typically NO₂ or NO, forms levels in the insulating film 514, forexample. The level is positioned in the energy gap of the oxidesemiconductor film 508. Therefore, when nitrogen oxide is diffused tothe interface between the insulating film 514 and the oxidesemiconductor film 508, an electron is in some cases trapped by thelevel on the insulating film 514 side. As a result, the trapped electronremains in the vicinity of the interface between the insulating film 514and the oxide semiconductor film 508; thus, the threshold voltage of thetransistor is shifted in the positive direction.

Nitrogen oxide reacts with ammonia and oxygen in heat treatment. Sincenitrogen oxide included in the insulating film 514 reacts with ammoniaincluded in the insulating film 516 in heat treatment, nitrogen oxideincluded in the insulating film 514 is reduced. Therefore, an electronis hardly trapped at the interface between the insulating film 514 andthe oxide semiconductor film 508.

When the oxide insulating film in which the density of states due tonitrogen oxide between E_(v_os) and E_(c_os) is low is used for theinsulating film 514, a shift in the threshold voltage of the transistorcan be reduced, which leads to reduced fluctuations in the electricalcharacteristics of the transistor.

Note that in an ESR spectrum at 100K or lower of the insulating film514, by heat treatment of a manufacturing process of the transistor,typically heat treatment at a temperature lower than 400° C. or lowerthan 375° C. (preferably, higher than or equal to 340° C. and lower thanor equal to 360° C.), a first signal that appears at a g-factor ofgreater than or equal to 2.037 and less than or equal to 2.039, a secondsignal that appears at a g-factor of greater than or equal to 2.001 andless than or equal to 2.003, and a third signal that appears at ag-factor of greater than or equal to 1.964 and less than or equal to1.966 are observed. The split width of the first and second signals andthe split width of the second and third signals that are obtained by ESRmeasurement using an X-band are each approximately 5 mT. The sum of thespin densities of the first signal that appears at a g-factor of greaterthan or equal to 2.037 and less than or equal to 2.039, the secondsignal that appears at a g-factor of greater than or equal to 2.001 andless than or equal to 2.003, and the third signal that appears at ag-factor of greater than or equal to 1.964 and less than or equal to1.966 is lower than 1×10¹⁸ spins/cm³, typically higher than or equal to1×10¹⁷ spins/cm³ and lower than 1×10¹⁸ spins/cm³.

In the ESR spectrum at 100 K or lower, the first signal that appears ata g-factor of greater than or equal to 2.037 and less than or equal to2.039, the second signal that appears at a g-factor of greater than orequal to 2.001 and less than or equal to 2.003, and the third signalthat appears at a g-factor of greater than or equal to 1.964 and lessthan or equal to 1.966 correspond to signals attributed to nitrogenoxide (NO_(x); x is greater than or equal to 0 and less than or equal to2, preferably greater than or equal to 1 and less than or equal to 2).Typical examples of nitrogen oxide include nitrogen monoxide andnitrogen dioxide. In other words, the lower the total spin density ofthe first signal that appears at a g-factor of greater than or equal to2.037 and less than or equal to 2.039, the second signal that appears ata g-factor of greater than or equal to 2.001 and less than or equal to2.003, and the third signal that appears at a g-factor of greater thanor equal to 1.964 and less than or equal to 1.966 is, the smaller amountof nitrogen oxide the oxide insulating film contains.

The nitrogen concentration in the oxide insulating film in which thedensity of states due to nitrogen oxide between E_(v_os) and E_(c)_os islow, which is measured by SIMS, is lower than or equal to 6×10²⁰atoms/cm³.

The oxide insulating film in which the density of states due to nitrogenoxide between E_(v_os) and E_(c)_os is low is formed by a PECVD methodat a substrate temperature higher than or equal to 220° C. and lowerthan or equal to 350° C. using silane and dinitrogen monoxide, whereby adense and hard film can be formed.

The insulating film 516 is formed using an oxide insulating film thatcontains oxygen in excess of that in the stoichiometric composition.Part of oxygen is released by heating from the oxide insulating filmcontaining oxygen in excess of that in the stoichiometric composition.The oxide insulating film containing oxygen in excess of that in thestoichiometric composition is an oxide insulating film of which theamount of released oxygen converted into oxygen atoms is greater than orequal to 1.0×10¹⁹ atoms/cm³, preferably greater than or equal to3.0×10²⁰ atoms/cm³ in TDS analysis. Note that the temperature of thefilm surface in the TDS analysis is preferably higher than or equal to100° C. and lower than or equal to 700° C., or higher than or equal to100° C. and lower than or equal to 500° C.

A silicon oxide film, a silicon oxynitride film, or the like with athickness greater than or equal to 30 nm and less than or equal to 500nm, preferably greater than or equal to 50 nm and less than or equal to400 nm can be used as the insulating film 516.

It is preferable that the number of defects in the insulating film 516be small, and typically the spin density corresponding to a signal whichappears at g=2.001 due to a dangling bond of silicon be lower than1.5×10¹⁸ spins/cm³, preferably lower than or equal to 1×10¹⁸ spins/cm³by ESR measurement. Note that the insulating film 516 is provided moreapart from the oxide semiconductor film 508 than the insulating film 514is; thus, the insulating film 516 may have higher density of defectsthan the insulating film 514.

Furthermore, the insulating films 514 and 516 can be formed usinginsulating films formed of the same kinds of materials; thus, a boundarybetween the insulating film 514 and the insulating film 516 cannot beclearly observed in some cases. Thus, in this embodiment, the boundarybetween the insulating film 514 and the insulating film 516 is shown bya dashed line. Although a two-layer structure of the insulating film 514and the insulating film 516 is described in this embodiment, the presentinvention is not limited to this structure. For example, a single-layerstructure of the insulating film 514 or the insulating film 516 may beemployed.

The insulating film 518 has a function of blocking oxygen, hydrogen,water, alkali metal, alkaline earth metal, and the like. It is possibleto prevent outward diffusion of oxygen from the oxide semiconductor film508, outward diffusion of oxygen included in the insulating films 514and 516, and entry of hydrogen, water, or the like into the oxidesemiconductor film 508 from the outside by providing the insulating film518. A nitride insulating film, for example, can be used as theinsulating film 518. The nitride insulating film is formed using siliconnitride, silicon nitride oxide, aluminum nitride, aluminum nitrideoxide, or the like. In particular, a silicon nitride oxide film or asilicon nitride film is preferably used as the insulating film 518, inwhich case outward diffusion of oxygen can be prevented.

Note that instead of the nitride insulating film having a blockingeffect against oxygen, hydrogen, water, alkali metal, alkaline earthmetal, and the like, an oxide insulating film having a blocking effectagainst oxygen, hydrogen, water, and the like may be provided as theinsulating film 518. As the oxide insulating film having a blockingeffect against oxygen, hydrogen, water, and the like, an aluminum oxidefilm, an aluminum oxynitride film, a gallium oxide film, a galliumoxynitride film, an yttrium oxide film, an yttrium oxynitride film, ahafnium oxide film, a hafnium oxynitride film, and the like can begiven. As the oxide insulating film having a blocking effect againstoxygen, hydrogen, water, and the like, an aluminum oxide film, a hafniumoxide film, or an yttrium oxide film is particularly preferable.

Although the variety of films such as the conductive films, theinsulating films, and the oxide semiconductor films which are describedabove can be formed by a sputtering method or a PECVD method, such filmsmay be formed by another method, e.g., a thermal chemical vapordeposition (CVD) method or an atomic layer deposition (ALD) method. Asan example of a thermal CVD method, a metal organic chemical vapordeposition (MOCVD) method can be given.

A thermal CVD method has an advantage that no defect due to plasmadamage is generated since it does not utilize plasma for forming a film.

Deposition over a substrate by a thermal CVD method may be performed insuch a manner that a source gas and an oxidizer are supplied to achamber at a time, the pressure inside the chamber is set to anatmospheric pressure or a reduced pressure, and the source gas and theoxidizer react with each other in the vicinity of the substrate or overthe substrate.

Deposition by an ALD method may be performed in such a manner that thepressure inside a chamber is set to an atmospheric pressure or a reducedpressure, source gases for reaction are sequentially introduced into thechamber, and then the sequence of the gas introduction is repeated. Forexample, two or more kinds of source gases are sequentially supplied tothe chamber by switching respective switching valves (also referred toas high-speed valves). For example, a first source gas is introduced, aninert gas (e.g., argon or nitrogen) or the like is introduced when orafter the first gas is introduced so that the source gases are notmixed, and then a second source gas is introduced. Note that in the casewhere the first source gas and the inert gas are introduced at a time,the inert gas serves as a carrier gas, and the inert gas may also beintroduced at the same time as the second source gas. Alternatively, thefirst source gas may be exhausted by vacuum evacuation instead of theintroduction of the inert gas, and then the second source gas may beintroduced. The first source gas is adsorbed on the surface of thesubstrate to form a first layer; then the second source gas isintroduced to react with the first layer; as a result, a second layer isstacked over the first layer, so that a thin film is formed. Thesequence of the gas introduction is repeated a plurality of times untila desired thickness is obtained, whereby a thin film with excellent stepcoverage can be formed. The thickness of the thin film can be adjustedby the number of repetition times of the sequence of the gasintroduction; therefore, an ALD method makes it possible to accuratelyadjust a thickness and thus is suitable for manufacturing a minute FET.

The variety of films such as the conductive films, the insulating films,the oxide semiconductor film, and the metal oxide film in thisembodiment can be formed by a thermal CVD method such as an MOCVDmethod. For example, in the case where an In—Ga—ZnO film is formed,trimethylindium, trimethylgallium, and dimethylzinc are used. Note thatthe chemical formula of trimethylindium is In(CH₃)₃. The chemicalformula of trimethylgallium is Ga(CH₃)₃. The chemical formula ofdimethylzinc is Zn(CH₃)₂. Without limitation to the above combination,triethylgallium (chemical formula: Ga(C₂H₅)₃) can be used instead oftrimethylgallium and diethylzinc (chemical formula: Zn(C₂H₅)₂) can beused instead of dimethylzinc.

For example, in the case where a hafnium oxide film is formed by adeposition apparatus using an ALD method, two kinds of gases, that is,ozone (O₃) as an oxidizer and a source gas which is obtained byvaporizing a liquid containing a solvent and a hafnium precursorcompound (e.g., a hafnium alkoxide or a hafnium amide such astetrakis(dimethylamide)hafnium (TDMAH)) are used. Note that the chemicalformula of tetrakis(dimethylamide)hafnium is Hf[N(CH₃)₂]₄. Examples ofanother material liquid include tetrakis(ethylmethylamide)hafnium.

For example, in the case where an aluminum oxide film is formed by adeposition apparatus using an ALD method, two kinds of gases, e.g., H₂Oas an oxidizer and a source gas which is obtained by vaporizing a liquidcontaining a solvent and an aluminum precursor compound (e.g.,trimethylaluminum (TMA)) are used. Note that the chemical formula oftrimethylaluminum is Al(CH₃)₃. Examples of another material liquidinclude tris(dimethylamide)aluminum, triisobutylaluminum, and aluminumtris(2,2,6,6-tetramethyl-3,5-heptanedionate).

For example, in the case where a silicon oxide film is formed with adeposition apparatus using an ALD method, hexachlorodisilane is adsorbedon a surface where a film is to be formed, chlorine included in theadsorbate is removed, and radicals of an oxidizing gas (e.g., O₂ ordinitrogen monoxide) are supplied to react with the adsorbate.

For example, in the case where a tungsten film is formed with adeposition apparatus using an ALD method, a WF₆ gas and a B₂H₆ gas aresequentially introduced a plurality of times to form an initial tungstenfilm, and then a WF₆ gas and an H₂ gas are sequentially introduced aplurality of times to form a tungsten film. Note that an SiH₄ gas may beused instead of a B₂H₆ gas.

For example, in the case where an oxide semiconductor film, e.g., anIn—Ga—ZnO film is formed with a deposition apparatus using an ALDmethod, an In(CH₃)₃ gas and an O₃ gas) are sequentially introduced aplurality of times to form an In—O layer, then a Ga(CH₃)₃ gas and an O₃gas) are sequentially introduced a plurality of times to form a GaOlayer, and then a Zn(CH₃)₂ gas and an O₃ gas) are sequentiallyintroduced a plurality of times to form a ZnO layer. Note that the orderof these layers is not limited to this example. A mixed compound layersuch as an In—Ga—O layer, an In—Zn—O layer, or a Ga—Zn—O layer may beformed by mixing these gases. Note that although an H₂O gas which isobtained by bubbling with an inert gas such as Ar may be used instead ofan O₃ gas), it is preferable to use an O₃ gas), which does not containH. Furthermore, instead of an In(CH₃)₃ gas, an In(C₂H₅)₃ gas may beused. Instead of a Ga(CH₃)₃ gas, a Ga(C₂H₅)₃ gas may be used.Furthermore, a Zn(CH₃)₂ gas may be used.

Structural Example 2 of Semiconductor Device

A structure example different from that of the transistor 500 in FIGS.14(B) and 14(C) will be described with reference to FIGS. 16(A) and16(B). Note that in the case where a portion has a function similar tothat described above, the same hatch pattern is applied to the portion,and the portion is not especially denoted by a reference numeral in somecases.

FIG. 16(A) is a top view of a transistor 570 that is a semiconductordevice of one embodiment of the present invention. FIG. 16(B) is across-sectional view taken along dashed-dotted line X3-X4 in FIG. 16(A),and a cross-sectional view taken along dashed-dotted line Y3-Y4 in FIG.16(A).

The transistor 570 includes the conductive film 504 functioning as afirst gate electrode over the substrate 502, the insulating film 506over the substrate 502 and the conductive film 504, the insulating film507 over the insulating film 506, the oxide semiconductor film 508 overthe insulating film 507, the insulating film 514 over the oxidesemiconductor film 508, the insulating film 516 over the insulating film514, the conductive film 512 a functioning as a source electrodeelectrically connected to the oxide semiconductor film 508, theconductive film 512 b functioning as a drain electrode electricallyconnected to the oxide semiconductor film 508, the insulating film 514over the oxide semiconductor film 508, the insulating film 516 over theinsulating film 514, the insulating film 518 over the insulating film516, a conductive film 520 a over the insulating film 518, and aconductive film 520 b over the insulating film 518. The insulating films514, 516, and 518 function as second gate insulating films of thetransistor 570. The conductive film 520 a is electrically connected tothe conductive film 512 b through an opening 542 c provided in theinsulating films 514, 516, and 518. The conductive film 520 a in thetransistor 570 functions as, for example, a pixel electrode used for adisplay device. The conductive film 520 b in the transistor 570functions as a second gate electrode (also referred to as a back gateelectrode).

As illustrated in FIG. 16(B), the conductive film 520 b is connected tothe conductive film 504 functioning as a first gate electrode throughopenings 542 a and 542 b provided in the insulating film 506, theinsulating film 507, the insulating film 514, the insulating film 516,and the insulating film 518. Accordingly, the conductive film 520 b andthe conductive film 504 are supplied with the same potential.

Note that although the structure in which the openings 542 a and 542 bare provided so that the conductive film 520 b and the conductive film504 are connected to each other is described in this embodiment, oneembodiment of the present invention is not limited thereto. For example,a structure in which only one of the openings 542 a and 542 b isprovided so that the conductive film 520 b and the conductive film 504are connected to each other, or a structure in which the openings 542 aand 542 b are not provided and the conductive film 520 b and theconductive film 504 are not connected to each other may be employed.Note that in the case where the conductive film 520 b and the conductivefilm 504 are not connected to each other, it is possible to applydifferent potentials to the conductive film 520 b and the conductivefilm 504.

As illustrated in FIG. 16(B), the oxide semiconductor film 508 ispositioned to face each of the conductive film 504 functioning as a gateelectrode and the conductive film 520 b functioning as a second gateelectrode, and is sandwiched between the two conductive filmsfunctioning as gate electrodes. The lengths in the channel lengthdirection and the channel width direction of the conductive film 520 bfunctioning as a second gate electrode are longer than those in thechannel length direction and the channel width direction of the oxidesemiconductor film 508.

The whole oxide semiconductor film 508 is covered with the conductivefilm 520 b with the insulating films 514, 516, and 518 positionedtherebetween. Since the conductive film 520 b functioning as a secondgate electrode is connected to the conductive film 504 functioning as agate electrode through the openings 542 a and 542 b provided in theinsulating film 506, the insulating film 507, the insulating film 514,the insulating film 516, and the insulating film 518, a side surface ofthe oxide semiconductor film 508 in the channel width direction facesthe conductive film 520 b functioning as a second gate electrode withthe insulating film 514, the insulating film 516, and the insulatingfilm 518 positioned therebetween.

In other words, in the channel width direction of the transistor 570,the conductive film 504 functioning as a gate electrode and theconductive film 520 b functioning as a second gate electrode areconnected to each other through the openings provided in the insulatingfilms 506 and 507 functioning as gate insulating films, and theinsulating films 514, 516, and 518 functioning as second gate insulatingfilms; and the conductive film 504 and the conductive film 520 bsurround the oxide semiconductor film 508 with the insulating films 506and 507 functioning as gate insulating films, and the insulating films514, 516, and 518 functioning as second gate insulating films positionedtherebetween.

With such a structure, the oxide semiconductor film 508 included in thetransistor 570 can be electrically surrounded by electric fields of theconductive film 504 functioning as a gate electrode and the conductivefilm 520 b functioning as a second gate electrode. A device structure ofa transistor, like that of the transistor 570, in which electric fieldsof a gate electrode and a second gate electrode electrically surround anoxide semiconductor film where a channel region is formed can bereferred to as a surrounded channel (s-channel) structure.

Since the transistor 570 has the s-channel structure, an electric fieldfor inducing a channel can be effectively applied to the oxidesemiconductor film 508 by the conductive film 504 functioning as a gateelectrode; therefore, the current drive capability of the transistor 570can be improved and high on-state current characteristics can beobtained. Since the on-state current can be increased, it is possible toreduce the size of the transistor 570. In addition, since the transistor570 has a structure in which the oxide semiconductor film 508 issurrounded by the conductive film 504 functioning as a gate electrodeand the conductive film 520 b functioning as a second gate electrode,the mechanical strength of the transistor 570 can be increased.

Note that the other components of the transistor 570 are the same asthose of the transistor 500 described above, and an effect similar tothat of the transistor 500 can be obtained.

The structures of the transistors of this embodiment can be freelycombined with each other. For example, the transistor 500 illustrated inFIGS. 14(A) and 14(B) can be used as a transistor in a pixel of adisplay device, and the transistor 570 illustrated in FIGS. 16(A) and16(B) can be used as a transistor in a gate driver of the displaydevice.

<Method 1 for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor 500 that is asemiconductor device of one embodiment of the present invention will bedescribed in detail with reference to FIGS. 10(A), 10(B), and 10(C) toFIG. 14(A). Note that FIGS. 10(A), 10(B), and 10(C) to FIG. 14(A) arecross-sectional views illustrating the method for manufacturing thesemiconductor device.

First, a conductive film is formed over the substrate 502 and processedthrough a lithography process and an etching process, whereby theconductive film 504 functioning as a gate electrode is formed. Then, theinsulating films 506 and 507 functioning as gate insulating films areformed over the conductive film 504 (see FIG. 10(A)).

In this embodiment, a glass substrate is used as the substrate 502, andas the conductive film 504 functioning as a gate electrode, a100-nm-thick tungsten film is formed by a sputtering method. A400-nm-thick silicon nitride film as the insulating film 506 is formedby a PECVD method and a 50-nm-thick silicon oxynitride film as theinsulating film 507 is formed by a PECVD method.

Note that the insulating film 506 can have a layered structure ofsilicon nitride films. Specifically, the insulating film 506 can have athree-layer structure of a first silicon nitride film, a second siliconnitride film, and a third silicon nitride film. An example of thethree-layer structure is as follows.

For example, the first silicon nitride film can be formed to have athickness of 50 nm under the conditions where silane at a flow rate of200 sccm, nitrogen at a flow rate of 2000 sccm, and an ammonia gas at aflow rate of 100 sccm are supplied as a source gas to a reaction chamberof a PECVD apparatus, the pressure in the reaction chamber is controlledto 100 Pa, and a power of 2000 W is supplied using a 27.12 MHzhigh-frequency power source.

The second silicon nitride film can be formed to have a thickness of 300nm under the conditions where silane at a flow rate of 200 sccm,nitrogen at a flow rate of 2000 sccm, and an ammonia gas at a flow rateof 2000 sccm are supplied as a source gas to the reaction chamber of thePECVD apparatus, the pressure in the reaction chamber is controlled to100 Pa, and a power of 2000 W is supplied using a 27.12 MHzhigh-frequency power source.

The third silicon nitride film can be formed to have a thickness of 50nm under the conditions where silane at a flow rate of 200 sccm andnitrogen at a flow rate of 5000 sccm are supplied as a source gas to thereaction chamber of the PECVD apparatus, the pressure in the reactionchamber is controlled to 100 Pa, and a power of 2000 W is supplied usinga 27.12 MHz high-frequency power source.

Note that the first silicon nitride film, the second silicon nitridefilm, and the third silicon nitride film can each be formed at asubstrate temperature of 350° C. or lower.

When the insulating film 506 has the three-layer structure of siliconnitride films, for example, in the case where a conductive filmcontaining copper (Cu) is used as the conductive film 504, the followingeffect can be obtained.

The first silicon nitride film can inhibit diffusion of a copper (Cu)element from the conductive film 504. The second silicon nitride filmhas a function of releasing hydrogen and can improve withstand voltageof the insulating film functioning as a gate insulating film. The thirdsilicon nitride film releases a small amount of hydrogen and can inhibitdiffusion of hydrogen released from the second silicon nitride film.

The insulating film 507 is preferably an insulating film containingoxygen to improve characteristics of an interface with the oxidesemiconductor film 508 (specifically, the first oxide semiconductor film508 a) formed later.

Next, over the insulating film 507, an oxide semiconductor film 509 isformed at a first temperature. The oxide semiconductor film 509 isformed in such a manner that a first oxide semiconductor film 509 a isformed first and then a second oxide semiconductor film 509 b is formed(see FIG. 10(B)).

The first temperature at which the oxide semiconductor film 509 isformed is higher than or equal to room temperature and lower than 340°C., preferably higher than or equal to room temperature and lower thanor equal to 300° C., further preferably higher than or equal to 100° C.and lower than or equal to 250° C., and still further preferably higherthan or equal to 100° C. and lower than or equal to 200° C. The oxidesemiconductor film 509 is formed while heat treatment is performed, sothat the crystallinity of the oxide semiconductor film 509 can beimproved. In the case where a large-sized glass substrate (for example,any of glass substrates of the 6th generation to the 10th generation) isused as the substrate 502, the substrate 502 is sometimes distorted whenthe first temperature is higher than or equal to 150° C. and lower than340° C. However, even in the case where a large-sized glass substrate isused, distortion of the glass substrate can be prevented when the firsttemperature is higher than or equal to 100° C. and lower than 150° C.

The first oxide semiconductor film 509 a and the second oxidesemiconductor film 509 b are formed at either the same substratetemperature or different substrate temperatures. Preferably, the firstoxide semiconductor film 509 a and the second oxide semiconductor film509 b are formed at the same substrate temperature because manufacturingcost can be reduced.

In this embodiment, the first oxide semiconductor film 509 a is formedby a sputtering method using an In—Ga—Zn metal oxide target (having anatomic ratio of In:Ga:Zn=4:2:4.1), and then the second oxidesemiconductor film 509 b is successively formed in a vacuum by asputtering method using an In—Ga—Zn metal oxide target (having an atomicratio of In:Ga:Zn=1:1:1.2). The first oxide semiconductor film 509 a andthe second oxide semiconductor film 509 b are formed at a substratetemperature of 170° C.

In the case where the oxide semiconductor film 509 is formed by asputtering method, a rare gas (typically argon), oxygen, or a mixed gasof a rare gas and oxygen is used as a sputtering gas, as appropriate. Inthe case of using the mixed gas of a rare gas and oxygen, the proportionof oxygen to a rare gas is preferably increased. In addition, increasingthe purity of a sputtering gas is necessary. For example, as an oxygengas or an argon gas used for a sputtering gas, a gas which is highlypurified to have a dew point of −40° C. or lower, preferably −80° C. orlower, further preferably −100° C. or lower, and still furtherpreferably −120° C. or lower is used, whereby entry of moisture and thelike into the oxide semiconductor film 509 can be minimized.

In the case where the oxide semiconductor film 509 is formed by asputtering method, a chamber in a sputtering apparatus is preferablyevacuated to be a high vacuum state (to the degree of approximately5×10⁻⁷ Pa or higher and 1×10⁻⁴ Pa or lower) with an adsorption vacuumevacuation pump such as a cryopump in order to remove water or the like,which serves as an impurity for the oxide semiconductor film 509, asmuch as possible. Alternatively, a turbo molecular pump and a cold trapare preferably combined so as to prevent a backflow of a gas, especiallya gas containing carbon or hydrogen, from an exhaust system to theinside of the chamber.

Then, the oxide semiconductor film 509 is processed, so that theisland-shaped oxide semiconductor film 508 is formed. Note that thefirst oxide semiconductor film 509 a is processed into the island-shapedfirst oxide semiconductor film 508 a, and the second oxide semiconductorfilm 509 b is processed into the island-shaped second oxidesemiconductor film 508 b (see FIG. 10(C)).

After that, heat treatment at a temperature higher than the firsttemperature is not performed, and a conductive film 512 to be the sourceelectrode and the drain electrode is formed over the insulating film 507and the oxide semiconductor film 508 by a sputtering method (see FIG.11(A)).

In this embodiment, as the conductive film 512, a layered film in whicha 50-nm-thick tungsten film and a 400-nm-thick aluminum film aresequentially stacked is formed by a sputtering method. Although theconductive film 512 has a two-layer structure in this embodiment, oneembodiment of the present invention is not limited thereto. For example,the conductive film 512 may have a three-layer structure in which a50-nm-thick tungsten film, a 400-nm-thick aluminum film, and a100-nm-thick titanium film are sequentially stacked.

Next, masks 536 a and 536 b are formed in desired regions over theconductive film 512 (see FIG. 11(B)).

In this embodiment, the masks 536 a and 536 b are formed in such amanner that a photosensitive resin film is formed over the conductivefilm 512 and is patterned through a lithography process.

Then, an etchant 538 is applied from above the conductive film 512 andthe masks 536 a and 536 b so that the conductive film 512 is processed,whereby the conductive films 512 a and 512 b separated from each otherare formed (see FIG. 11(C)).

In this embodiment, the conductive film 512 is processed with a dryetching apparatus.

Note that a method for forming the conductive film 512 is not limitedthereto. For example, the conductive film 512 and the second oxidesemiconductor film 508 b may be processed using a chemical solution asthe etchant 538 with a wet etching apparatus. Note that a finer patterncan be formed when a dry etching apparatus is used for processing theconductive film 512 than when a wet etching apparatus is used. However,when a wet etching apparatus is used for processing the conductive film512, manufacturing cost can be more reduced than when a dry etchingapparatus is used.

Then, an etchant 539 is applied from above the second oxidesemiconductor film 508 b, the conductive films 512 a and 512 b, and themasks 536 a and 536 b to clean a surface of the second oxidesemiconductor film 508 b (see FIG. 12(A)).

The cleaning may be performed, for example, using a chemical solutionsuch as phosphoric acid. The cleaning using a chemical solution such asphosphoric acid can remove impurities (e.g., an element included in theconductive films 512 a and 512 b) attached to the surface of the secondoxide semiconductor film 508 b. Note that the cleaning is notnecessarily performed; in some cases, the cleaning does not need to beperformed.

Through the formation and/or the above cleaning step of the conductivefilms 512 a and 512 b, a region of the second oxide semiconductor film508 b which is exposed from the conductive film 512 a or 512 b sometimesbecomes thinner than the first oxide semiconductor film 508 a.

Note that, through the formation of the conductive films 512 a and 512 band/or the above cleaning step, the region of the second oxidesemiconductor film 508 b which is exposed from the conductive films 512a and 512 b sometimes is not thinned in some cases. FIGS. 15(A) and15(B) illustrate examples of such a case. FIGS. 15(A) and 15(B) arecross-sectional views illustrating examples of a semiconductor device.FIG. 15(A) illustrates an example in which the second oxidesemiconductor film 508 b of the transistor 500 illustrated in FIG. 14(B)does not become thin.

Alternatively, as illustrated in FIG. 15(B), the thickness of the secondoxide semiconductor film 508 b may be made smaller than that of thefirst oxide semiconductor film 508 a in advance and the thickness of theregion which is exposed from the conductive films 512 a and 512 b may besubstantially the same as that in the transistor 500 illustrated in FIG.14(B). Alternatively, as illustrated in FIG. 15(C), the thickness of thesecond oxide semiconductor film 508 b may be made smaller than that ofthe first oxide semiconductor film 508 a in advance and an insulatingfilm 519 may be formed over the second oxide semiconductor film 508 band the insulating film 507. In this case, openings in which the secondoxide semiconductor film 508 b is to be contact with the conductive film512 a and the conductive film 512 b are formed in the insulating film519. The insulating film 519 can be formed using a material and aformation method similar to those of the insulating film 514.

Then, the masks 536 a and 536 b are removed, whereby the conductive film512 a functioning as the source electrode over the second oxidesemiconductor film 508 b and the conductive film 512 b functioning asthe drain electrode over the second oxide semiconductor film 508 areformed. The oxide semiconductor film 508 has a layered structure of thefirst oxide semiconductor film 508 a and the second oxide semiconductorfilm 508 b (see FIG. 12(B)).

Next, the insulating film 514 functioning as the first protectiveinsulating film and the insulating film 516 functioning as the secondprotective insulating film are formed over the oxide semiconductor film508 and the conductive films 512 a and 512 b, and then a first barrierfilm 531 is formed (see FIG. 12(C)).

Note that after the insulating film 514 is formed, the insulating film516 is preferably formed in succession without exposure to the air.After the insulating film 514 is formed, the insulating film 516 isformed in succession by adjusting at least one of the flow rate of asource gas, pressure, a high-frequency power, and a substratetemperature without exposure to the air, whereby the concentration ofimpurities attributed to the atmospheric component at the interfacebetween the insulating film 514 and the insulating film 516 can bereduced, and oxygen in the insulating films 514 and 516 can be moved tothe oxide semiconductor film 508; accordingly, the number of oxygenvacancies in the oxide semiconductor film 508 can be reduced.

For example, as the insulating film 514, a silicon oxynitride film canbe formed by a PECVD method. In this case, a deposition gas containingsilicon and an oxidizing gas are preferably used as a source gas.Typical examples of the deposition gas containing silicon includesilane, disilane, trisilane, and silane fluoride. Examples of theoxidizing gas include dinitrogen monoxide and nitrogen dioxide. Aninsulating film containing nitrogen and having a small number of defectscan be formed as the insulating film 514 by a PECVD method under theconditions where the flow rate of the oxidizing gas is higher than 20times and lower than 100 times, preferably higher than or equal to 40times and lower than or equal to 80 times, that of the deposition gas;and the pressure in a process chamber is lower than 100 Pa, preferablylower than or equal to 50 Pa.

In this embodiment, a silicon oxynitride film is formed as theinsulating film 514 by a PECVD method under the conditions where thesubstrate 502 is held at a temperature of 220° C., silane at a flow rateof 50 sccm and dinitrogen monoxide at a flow rate of 2000 sccm are usedas a source gas, the pressure in the process chamber is 20 Pa, and ahigh-frequency power of 100 W at 13.56 MHz (1.6×10⁻² W/cm² as the powerdensity) is supplied to parallel-plate electrodes.

As the insulating film 516, a silicon oxide film or a silicon oxynitridefilm is formed under the conditions where the substrate placed in aprocess chamber of the PECVD apparatus, which is vacuum-evacuated, isheld at a temperature higher than or equal to 180° C. and lower than orequal to 350° C., the pressure is greater than or equal to 100 Pa andless than or equal to 250 Pa, preferably greater than or equal to 100 Paand less than or equal to 200 Pa, with introduction of a source gas intothe process chamber, and a high-frequency power greater than or equal to0.17 W/cm² and less than or equal to 0.5 W/cm², preferably greater thanor equal to 0.25 W/cm² and less than or equal to 0.35 W/cm², is suppliedto an electrode provided in the process chamber.

As the deposition conditions of the insulating film 516, thehigh-frequency power having the above power density is supplied to areaction chamber having the above pressure, whereby the degradationefficiency of the source gas in plasma is increased, oxygen radicals areincreased, and oxidation of the source gas is promoted; thus, the oxygencontent in the insulating film 516 becomes higher than that in thestoichiometric composition. On the other hand, in the film formed at asubstrate temperature within the above temperature range, the bondbetween silicon and oxygen is weak, and accordingly, part of oxygen inthe film is released by heat treatment in a later step. Thus, an oxideinsulating film which contains oxygen in excess of that in thestoichiometric composition and from which part of oxygen is released byheating can be formed.

Note that the insulating film 514 functions as a protective film for theoxide semiconductor film 508 in the step of forming the insulating film516. Therefore, the insulating film 516 can be formed using thehigh-frequency power having a high power density while damage to theoxide semiconductor film 508 is reduced.

Note that in the deposition conditions of the insulating film 516, whenthe flow rate of the deposition gas containing silicon with respect tothe oxidizing gas is increased, the number of defects in the insulatingfilm 516 can be reduced. Typically, it is possible to form an oxideinsulating film in which the number of defects is small, that is, thespin density of a signal which appears at g=2.001 owing to a danglingbond of silicon is lower than 6×10¹⁷ spins/cm³, preferably lower than orequal to 3×10¹⁷ spins/cm³, and further preferably lower than or equal to1.5×10¹⁷ spins/cm³, by ESR measurement. As a result, the reliability ofthe transistor can be improved.

After the insulating films 514 and 516 are formed (i.e., after theinsulating film 516 is formed and before the first barrier film 531 isformed), heat treatment may be performed. The heat treatment can reducenitrogen oxide contained in the insulating films 514 and 516. By theheat treatment, part of oxygen contained in the insulating films 514 and516 can be moved to the oxide semiconductor film 508, so that the numberof oxygen vacancies in the oxide semiconductor film 508 can be reduced.

The temperature of the heat treatment performed on the insulating films514 and 516 is typically lower than 400° C., preferably lower than 375°C., further preferably higher than or equal to 340° C. and lower than360° C., and still further preferably higher than or equal to 150° C.and lower than or equal to 350° C. The heat treatment may be performedunder an atmosphere of nitrogen, oxygen, ultra-dry air (air in which thewater content is 20 ppm or less, preferably 1 ppm or less, furtherpreferably 10 ppb or less), or a rare gas (argon, helium, or the like).Note that it is preferable that hydrogen, water, and the like not becontained in the nitrogen, oxygen, ultra-dry air, or a rare gas. Anelectric furnace, an RTA apparatus, or the like can be used for the heattreatment.

The first barrier film 531 contains oxygen and metal (at least one ofindium, zin, titanium, aluminum, tungsten, tantalum, molybdenum,hafnium, and yttrium). Indium tin oxide (also referred to as ITO: IndiumTin Oxide), indium tin silicon oxide (hereinafter also referred to asITSO), or indium oxide is preferably used for the first barrier film 531because unevenness can be favorably covered.

The first barrier film 531 can be formed by a sputtering method. Whenthe first barrier film 531 is thin, it is sometimes difficult to inhibitrelease of oxygen from the insulating film 516 to the outside. Incontrast, when the first barrier film 531 is thick, oxygen cannot befavorably added to the insulating film 516 in some cases. Therefore, thethickness of the first barrier film 531 is preferably greater than orequal to 1 nm and less than or equal to 20 nm, further preferablygreater than or equal to 2 nm and less than or equal to 10 nm. In thisembodiment, a 5-nm-thick ITSO film is formed as the first barrier film531.

After that, oxygen 540 is added to the insulating film 516 functioningas a second protective insulating film through the first barrier film531. In the drawing, oxygen added into the insulating film 516 isschematically shown as oxygen 540 a (see FIG. 13(A)). Furthermore, theoxygen 540 is added to the insulating film 514 in some cases.

As a method for adding the oxygen 540 to the insulating film 516 throughthe first barrier film 531, an ion doping method, an ion implantationmethod, a plasma treatment method, or the like can be used. The oxygen540 may be excess oxygen, oxygen radicals, or the like. By the biasapplication to the substrate side when the oxygen 540 is added, theoxygen 540 can be effectively added to the insulating film 516. As thebias, for example, power density can be greater than or equal to 1 W/cm²and less than or equal to 5 W/cm². When the first barrier film 531 isprovided over the insulating film 516 and then oxygen is added, thefirst barrier film 531 functions as a protective film for inhibitingrelease of oxygen from the insulating film 516. Thus, a larger amount ofoxygen can be added to the insulating film 516.

Next, the first barrier film 531 or part of the first barrier film 531,and part of the insulating film 516 functioning as the second protectiveinsulating film are removed using an etchant 542 (see FIG. 13(B)).

As a method for removing the first barrier film 531 and part of theinsulating film 516 functioning as the second protective insulatingfilm, a dry etching method, a wet etching method, a combination of a dryetching method and a wet etching method, and the like can be given. Notethat the etchant 542 is an etching gas in the case of a dry etchingmethod and the etchant 542 is a chemical solution in the case of a wetetching method. In this embodiment, the first barrier film 531 isremoved by a wet etching method. The wet etching method is preferablyemployed for removing the first barrier film 531 because manufacturingcost can be saved.

After that, the insulating film 518 functioning as a second barrier filmis formed over the insulating film 516 (see FIG. 14(A)).

When the insulating film 518 is formed by a PECVD method, the substratetemperature is lower than 400° C., preferably lower than 375° C.,further preferably higher than or equal to 340° C. and lower than orequal to 360° C. When the substrate temperature during the formation ofthe insulating film 518 is in the above range, the above excess oxygenor the above oxygen radicals can be diffused to the oxide semiconductorfilm 508. In addition, the substrate temperature during the formation ofthe insulating film 518 is preferably in the above range because a densefilm can be formed.

For example, in the case where a silicon nitride film is formed by aPECVD method as the insulating film 518, a deposition gas containingsilicon, nitrogen, and ammonia are preferably used as a source gas. Theamount of ammonia is made smaller than that of nitrogen, whereby ammoniais dissociated in the plasma and activated species are generated. Theactivated species cleave a bond between silicon and hydrogen which arecontained in a deposition gas containing silicon and a triple bondbetween nitrogen molecules. As a result, a dense silicon nitride filmhaving few defects, in which bonds between silicon and nitrogen arepromoted and bonds between silicon and hydrogen are few, can be formed.On the other hand, when the amount of ammonia with respect to nitrogenis large, decomposition of a deposition gas containing silicon anddecomposition of nitrogen are not promoted, so that a sparse siliconnitride film in which bonds between silicon and hydrogen remain anddefects are increased is formed. Therefore, the flow rate ratio ofnitrogen to ammonia in the source gas is set to be greater than or equalto 5:1 and less than or equal to 50:1, preferably greater than or equalto 10:1 and less than or equal to 50:1.

In this embodiment, with the use of a PECVD apparatus, a 50-nm-thicksilicon nitride film is formed as the insulating film 518 using silane,nitrogen, and ammonia as a source gas. The flow rate of silane is 50sccm, the flow rate of nitrogen is 5000 sccm, and the flow rate ofammonia is 100 sccm. The pressure in the process chamber is 100 Pa, thesubstrate temperature is 350° C., and a high-frequency power of 1000 Wis supplied to parallel-plate electrodes with a 27.12 MHz high-frequencypower source. Note that the PECVD apparatus is a parallel-plate PECVDapparatus in which the electrode area is 6000 cm², and the power perunit area (power density) into which the supplied power is converted is1.7×10⁻¹ W/cm².

Note that heat treatment may be performed after the insulating film 518functioning as the second barrier film is formed. Through the heattreatment after the insulating film 518 is formed, excess oxygen oroxygen radicals in the insulating film 516 can be diffused into theoxide semiconductor film 508 to fill oxygen vacancies in the oxidesemiconductor film 508. Alternatively, the insulating film 518 may beformed while heat treatment is performed, whereby excess oxygen oroxygen radicals in the insulating film 516 can be diffused into theoxide semiconductor film 508 to fill oxygen vacancies in the oxidesemiconductor film 508.

Through the above process, the transistor 500 illustrated in FIG. 14(B)can be manufactured.

<Method 2 for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor 500, which is differentfrom the manufacturing method described with reference to FIGS. 10(A),10(B), and 10(C) to FIG. 14(A), will be described below.

First, like in <Method 1 for manufacturing semiconductor device>, thesteps illustrated in FIGS. 10(A), 10(B), and 10(C), FIGS. 11(A), 11(B),and 11(C), and FIGS. 12(A), 12(B), and 12(C) are performed. After that,the steps illustrated in FIGS. 13(A) and 13(B) and FIG. 14(A) are notperformed. In other words, the structure illustrated in FIG. 12(C) has afunction similar to that of the transistor 500 illustrated in FIGS.14(B) and 14(C).

In this case, a metal oxide film is used as the first barrier film 531,and as the metal oxide film, aluminum oxide, hafnium oxide, or yttriumoxide is preferably deposited.

When aluminum oxide, hafnium oxide, or yttrium oxide is deposited as thefirst barrier film 531 by a sputtering method, a sputtering gaspreferably contains at least oxygen. In some cases, oxygen for thesputtering gas for forming the first barrier film 531 becomes oxygenradicals in plasma, and the oxygen and/or the oxygen radicals can beadded to the insulating film 516. In that case, the step of adding theoxygen 540 illustrated in FIG. 13(A) can be skipped. That is, the stepof forming the first barrier film 531 can double as oxygen addingtreatment. The first barrier film 531 has a function of adding oxygenduring the formation of the first barrier film (in particular, at theinitial stage of deposition), whereas it has a function of blockingoxygen after the formation of the first barrier film 531.

In the case where aluminum oxide is deposited as the first barrier film531 by a sputtering method, a mixed layer is sometimes formed in thevicinity of the interface between the insulating film 516 and the firstbarrier film 531. When the insulating film 516 is a silicon oxynitridefilm, Al_(x)Si_(y)O_(z) is formed as the mixed layer in some cases.

In the case where aluminum oxide, hafnium oxide, or yttrium oxide isused for the first barrier film 531, aluminum oxide, hafnium oxide, andyttrium oxide have a high insulating property and a high barrierproperty against oxygen. Thus, the step of removing the first barrierfilm 531 illustrated in FIG. 13(B) and the step of forming theinsulating film 518 illustrated in FIG. 14(A) do not need to beperformed. Therefore, the first barrier film 531 has the same functionas the insulating film 518.

Note that the first barrier film 531 is formed while heat treatment isperformed at a substrate temperature lower than 400° C., preferablylower than 375° C., further preferably higher than or equal to 340° C.and lower than or equal to 360° C., whereby excess oxygen or oxygenradicals added to the insulating film 516 can be diffused into the oxidesemiconductor film 508. Alternatively, heat treatment is performed at atemperature lower than 400° C., preferably lower than 375° C., furtherpreferably higher than or equal to 340° C. and lower than or equal to360° C. after the first barrier film 531 is formed, whereby excessoxygen or oxygen radicals added to the insulating film 516 can bediffused into the oxide semiconductor film 508.

The use of aluminum oxide, hafnium oxide, or yttrium oxide for the firstbarrier film 531 can shorten the manufacturing process of thesemiconductor device and thus manufacturing cost can be saved.

<Method 3 for Manufacturing Semiconductor Device>

Next, a method for manufacturing the transistor 570 that is oneembodiment of the present invention will be described with reference toFIGS. 17(A), 17(B), and 17(C). Note that FIGS. 17(A), 17(B), and 17(C)are cross-sectional views illustrating the method for manufacturing thesemiconductor device.

First, steps similar to those in the manufacturing method of thetransistor 500 described above are performed (the steps illustrated inFIG. 10(A) to FIG. 14(A)).

Next, a mask is formed over the insulating film 518 through alithography process, and the opening 542 c is formed in a desired regionin the insulating films 514, 516, and 518. In addition, a mask is formedover the insulating film 518 through a lithography process, and theopenings 542 a and 542 b are formed in desired regions in the insulatingfilms 506, 507, 514, 516, and 518. Note that the opening 542 c reachesthe conductive film 512 b. The openings 542 a and 542 b reach theconductive film 504 (see FIG. 17(A)).

Note that the openings 542 a and 542 b and the opening 542 c may beformed in the same step or may be formed by different steps. In the casewhere the openings 542 a and 542 b and the opening 542 c are formed inthe same step, for example, a gray-tone mask or a half-tone mask can beused. Moreover, the openings 542 a and 542 b may be formed in somesteps. For example, the insulating films 506 and 507 are processed andthen the insulating films 514, 516, and 518 are processed.

Next, a conductive film 520 is formed over the insulating film 518 tocover the openings 542 a, 542 b, and 542 c (see FIG. 17(B)).

For the conductive film 520, for example, a material containing one ofindium (In), zinc (Zn), and tin (Sn) can be used. In particular, theconductive film 520 can be formed using a light-transmitting conductivematerial such as indium oxide containing tungsten oxide, indium zincoxide containing tungsten oxide, indium oxide containing titanium oxide,indium tin oxide containing titanium oxide, indium tin oxide (ITO),indium zinc oxide, or indium tin silicon oxide (ITSO). The conductivefilm 520 can be formed by a sputtering method, for example. In thisembodiment, a 110-nm-thick ITSO film is formed by a sputtering method.

Next, a mask is formed over the conductive film 520 through alithography process, and the conductive film 520 is processed intodesired shapes to form the conductive films 520 a and 520 b (see FIG.17(C)).

To form the conductive films 520 a and 520 b, for example, a dry etchingmethod, a wet etching method, or a combination of a dry etching methodand a wet etching method is used. In this embodiment, a wet etchingmethod is employed for processing the conductive film 520 into theconductive films 520 a and 520 b.

Through the above process, the transistor 570 illustrated in FIGS. 16(A)and 16(B) can be manufactured.

The structures and methods described in this embodiment can beimplemented by being combined as appropriate with any of the otherstructures and methods described in the other embodiments.

Embodiment 3

In this embodiment, the structure of an oxide semiconductor filmincluded in a semiconductor device of one embodiment of the presentinvention will be described in detail.

<Structure of Oxide Semiconductor>

An oxide semiconductor is classified into a single crystal oxidesemiconductor and a non-single-crystal oxide semiconductor. Examples ofa non-single-crystal oxide semiconductor include a CAAC-OS (C AxisAligned Crystalline Oxide Semiconductor), a polycrystalline oxidesemiconductor, an nc-OS (nanocrystalline Oxide Semiconductor), anamorphous-like oxide semiconductor (a-like OS: amorphous like OxideSemiconductor), and an amorphous oxide semiconductor.

From another perspective, an oxide semiconductor is classified into anamorphous oxide semiconductor and a crystalline oxide semiconductor.Examples of a crystalline oxide semiconductor include a single crystaloxide semiconductor, a CAAC-OS, a polycrystalline oxide semiconductor,and an nc-OS.

It is known that an amorphous structure is generally defined as beingmetastable and unfixed, and being isotropic and having no non-uniformstructure. In other words, an amorphous structure has a flexible bondangle and a short-range order but does not have a long-range order.

This means that an inherently stable oxide semiconductor cannot beregarded as a completely amorphous oxide semiconductor. Moreover, anoxide semiconductor that is not isotropic (e.g., an oxide semiconductorthat has a periodic structure in a microscopic region) cannot beregarded as a completely amorphous oxide semiconductor. Note that ana-like OS has a periodic structure in a microscopic region, but at thesame time has a void and has an unstable structure. For this reason, ana-like OS has physical properties similar to those of an amorphous oxidesemiconductor.

<CAAC-OS>

First, a CAAC-OS is described.

A CAAC-OS is one of oxide semiconductors having a plurality of c-axisaligned crystal parts (also referred to as pellets).

In a combined analysis image (also referred to as a high-resolution TEMimage) of a bright-field image and a diffraction pattern of a CAAC-OS,which is obtained using a transmission electron microscope (TEM), aplurality of pellets can be observed. However, in the high-resolutionTEM image, a boundary between pellets, that is, a grain boundary is notclearly observed. Thus, in the CAAC-OS, a reduction in electron mobilitydue to the grain boundary is less likely to occur.

A CAAC-OS observed with TEM is described below. FIG. 19(A) shows ahigh-resolution TEM image of a cross section of the CAAC-OS which isobserved from a direction substantially parallel to the sample surface.The high-resolution TEM image is obtained with a spherical aberrationcorrector function. The high-resolution TEM image obtained with aspherical aberration corrector function is particularly referred to as aCs-corrected high-resolution TEM image. The Cs-corrected high-resolutionTEM image can be obtained with, for example, an atomic resolutionanalytical electron microscope JEM-ARM200F manufactured by JEOL Ltd.

FIG. 19(B) is an enlarged Cs-corrected high-resolution TEM image of aregion (1) in FIG. 19(A). FIG. 19(B) shows that metal atoms are arrangedin a layered manner in a pellet. Each metal atom layer has aconfiguration reflecting unevenness of a surface over which the CAAC-OSis formed (hereinafter, the surface is referred to as a formationsurface) or a top surface of the CAAC-OS, and is arranged parallel tothe formation surface or the top surface of the CAAC-OS.

As shown in FIG. 19(B), the CAAC-OS has a characteristic atomicarrangement. The characteristic atomic arrangement is denoted by anauxiliary line in FIG. 19(C). FIG. 19(B) and FIG. 19(C) prove that thesize of a pellet is greater than or equal to 1 nm or greater than orequal to 3 nm, and the size of a space caused by tilt of the pellets isapproximately 0.8 nm. Therefore, the pellet can also be referred to as ananocrystal (nc). Note that a CAAC-OS can be referred to as an oxidesemiconductor including CANC (C-Axis Aligned nanocrystals).

Here, according to the Cs-corrected high-resolution TEM images, theschematic arrangement of pellets 5100 of a CAAC-OS over a substrate 5120is illustrated by such a structure in which bricks or blocks are stacked(see FIG. 19(D)). The part in which the pellets are tilted as observedin FIG. 19(C) corresponds to a region 5161 shown in FIG. 19(D).

FIG. 20(A) shows a Cs-corrected high-resolution TEM image of a plane ofthe CAAC-OS observed from a direction substantially perpendicular to thesample surface. FIG. 20(B), FIG. 20(C), and FIG. 20(D) are enlargedCs-corrected high-resolution TEM images of regions (1), (2), and (3) inFIG. 20(A), respectively. FIG. 20(B), FIG. 20(C), and FIG. 20(D)indicate that metal atoms are arranged in a triangular, quadrangular, orhexagonal configuration in a pellet. However, there is no regularity ofarrangement of metal atoms between different pellets.

Next, a CAAC-OS analyzed by X-ray diffraction (XRD: X-Ray Diffraction)is described. For example, when the structure of a CAAC-OS including anInGaZnO₄ crystal is analyzed by an out-of-plane method, a peak appearsat a diffraction angle (2θ) of around 310 as shown in FIG. 21(A). THISpeak is derived from the (009) plane of the InGaZnO₄ crystal, whichindicates that crystals in the CAAC-OS have c-axis alignment, and thatthe c-axes are aligned in a direction substantially perpendicular to theformation surface or the top surface of the CAAC-OS.

Note that in structural analysis of the CAAC-OS by an out-of-planemethod, another peak may appear when 2θ is around 36°, in addition tothe peak at 2θ of around 31°. The peak at 2θ of around 360 indicatesthat a crystal having no c-axis alignment is included in part of theCAAC-OS. It is preferable that in the CAAC-OS analyzed by anout-of-plane method, a peak appear when 2θ is around 31° and that a peaknot appear when 2θ is around 36°.

On the other hand, in structural analysis of the CAAC-OS by an in-planemethod in which an X-ray is incident on a sample in a directionsubstantially perpendicular to the c-axis, a peak appears when 2θ isaround 56°. This peak is attributed to the (110) plane of the InGaZnO₄crystal. In the case of the CAAC-OS, when analysis (ϕ scan) is performedwith 2θ fixed at around 56° and with the sample rotated using a normalvector of the sample surface as an axis (ϕ axis), as shown in FIG.21(B), a peak is not clearly observed. In contrast, in the case of asingle crystal oxide semiconductor of InGaZnO₄, when ϕ scan is performedwith 2θ fixed at around 56°, as shown in FIG. 21(C), six peaks which arederived from crystal planes equivalent to the (110) plane are observed.Accordingly, the structural analysis using XRD shows that the directionsof a-axes and b-axes are irregularly oriented in the CAAC-OS.

Next, a CAAC-OS analyzed by electron diffraction is described. Forexample, when an electron beam with a probe diameter of 300 nm isincident on a CAAC-OS including an InGaZnO₄ crystal in a directionparallel to the sample surface, a diffraction pattern (also referred toas a selected-area transmission electron diffraction pattern) shown inFIG. 22(A) can be obtained. In this diffraction pattern, spots derivedfrom the (009) plane of an InGaZnO₄ crystal are included. Thus, theelectron diffraction also indicates that pellets included in the CAAC-OShave c-axis alignment and that the c-axes are aligned in a directionsubstantially perpendicular to the formation surface or the top surfaceof the CAAC-OS. Meanwhile, FIG. 22(B) shows a diffraction patternobtained in such a manner that an electron beam with a probe diameter of300 nm is incident on the same sample in a direction perpendicular tothe sample surface. As shown in FIG. 22(B), a ring-like diffractionpattern is observed. Thus, the electron diffraction also indicates thatthe a-axes and b-axes of the pellets included in the CAAC-OS do not haveregular alignment. The first ring in FIG. 22(B) is considered to bederived from the (010) plane, the (100) plane, and the like of theInGaZnO₄ crystal. The second ring in FIG. 22(B) is considered to bederived from the (110) plane and the like.

As described above, the CAAC-OS is an oxide semiconductor with highcrystallinity. Entry of impurities, formation of defects, or the likemight decrease the crystallinity of an oxide semiconductor. This meansthat the CAAC-OS has small amounts of impurities and defects (e.g.,oxygen vacancies).

Note that the impurity means an element other than the main componentsof the oxide semiconductor, such as hydrogen, carbon, silicon, or atransition metal element. For example, an element (specifically, siliconor the like) having higher strength of bonding to oxygen than a metalelement included in an oxide semiconductor extracts oxygen from theoxide semiconductor, which results in disorder of the atomic arrangementand reduced crystallinity of the oxide semiconductor. A heavy metal suchas iron or nickel, argon, carbon dioxide, or the like has a large atomicradius (or molecular radius), and thus disturbs the atomic arrangementof the oxide semiconductor and decreases crystallinity.

The characteristics of an oxide semiconductor having impurities ordefects might be changed by light, heat, or the like. Impuritiescontained in the oxide semiconductor might serve as carrier traps orcarrier generation sources, for example. Furthermore, oxygen vacanciesin the oxide semiconductor serve as carrier traps or serve as carriergeneration sources when hydrogen is captured therein.

The CAAC-OS having small amounts of impurities and oxygen vacancies isan oxide semiconductor with low carrier density. Such an oxidesemiconductor is referred to as a highly purified intrinsic orsubstantially highly purified intrinsic oxide semiconductor. A CAAC-OShas a low impurity concentration and a low density of defect states.Thus, the CAAC-OS can be referred to as an oxide semiconductor havingstable characteristics.

<nc-OS>

Next, an nc-OS is described.

An nc-OS has a region in which a crystal part is observed and a regionin which a crystal part is not clearly observed in a high-resolution TEMimage. In most cases, the size of a crystal part included in the nc-OSis greater than or equal to 1 nm and less than or equal to 10 nm, orgreater than or equal to 1 nm. Note that an oxide semiconductorincluding a crystal part whose size is greater than 10 nm and less thanor equal to 100 nm is sometimes referred to as a microcrystalline oxidesemiconductor. In a high-resolution TEM image of the nc-OS, for example,a grain boundary is not clearly observed in some cases. Note that thereis a possibility that the origin of the nanocrystal is the same as thatof a pellet in a CAAC-OS. Therefore, a crystal part of the nc-OS may bereferred to as a pellet in the following description.

In the nc-OS, a microscopic region (for example, a region with a sizegreater than or equal to 1 nm and less than or equal to 10 nm, inparticular, a region with a size greater than or equal to 1 nm and lessthan or equal to 3 nm) has a periodic atomic arrangement. There is noregularity of crystal orientation between different pellets in thenc-OS. Thus, the orientation of the whole film is not observed.Accordingly, the nc-OS cannot be distinguished from an a-like OS or anamorphous oxide semiconductor, depending on an analysis method. Forexample, when the nc-OS is analyzed by an out-of-plane method using anX-ray beam having a diameter larger than the size of a pellet, a peakwhich shows a crystal plane does not appear. Furthermore, a diffractionpattern like a halo pattern is observed when the nc-OS is subjected toelectron diffraction using an electron beam with a probe diameter (e.g.,50 nm or larger) that is larger than the size of a pellet. Meanwhile,spots appear in a nanobeam electron diffraction pattern of the nc-OSwhen an electron beam having a probe diameter close to or smaller thanthe size of a pellet is applied. Moreover, in a nanobeam electrondiffraction pattern of the nc-OS, regions with high luminance in acircular (ring) pattern are shown in some cases. Also in a nanobeamelectron diffraction pattern of the nc-OS, a plurality of spots is shownin a ring-like region in some cases.

Since there is no regularity of crystal orientation between the pellets(nanocrystals) as mentioned above, the nc-OS can also be referred to asan oxide semiconductor including random aligned nanocrystals (RANC) oran oxide semiconductor including non-aligned nanocrystals (NANC).

The nc-OS is an oxide semiconductor that has high regularity as comparedwith an amorphous oxide semiconductor. Therefore, the nc-OS is likely tohave a lower density of defect states than an a-like OS and an amorphousoxide semiconductor. Note that there is no regularity of crystalorientation between different pellets in the nc-OS. Therefore, the nc-OShas a higher density of defect states than the CAAC-OS.

<a-like OS>

An a-like OS has a structure intermediate between those of the nc-OS andthe amorphous oxide semiconductor.

In a high-resolution TEM image of the a-like OS, avoid may be observed.Furthermore, in the high-resolution TEM image, there are a region wherea crystal part is clearly observed and a region where a crystal part isnot observed.

The a-like OS has an unstable structure because it contains a void. Toverify that an a-like OS has an unstable structure as compared with aCAAC-OS and an nc-OS, a change in structure caused by electronirradiation is described below.

An a-like OS (referred to as Sample A), an nc-OS (referred to as SampleB), and a CAAC-OS (referred to as Sample C) are prepared as samplessubjected to electron irradiation. Each of the samples is an In—Ga—Znoxide.

First, a high-resolution cross-sectional TEM image of each sample isobtained. The high-resolution cross-sectional TEM images show that allthe samples have crystal parts.

Note that which part is regarded as a crystal part is determined asfollows. It is known that a unit cell of the InGaZnO₄ crystal has astructure in which nine layers including three In—O layers and sixGa—Zn—O layers are stacked in the c-axis direction. The distance betweenthe adjacent layers is equivalent to the lattice spacing on the (009)plane (also referred to as d value).

The value is calculated to be 0.29 nm from crystal structural analysis.Accordingly, a portion where the lattice spacing between lattice fringesis greater than or equal to 0.28 nm and less than or equal to 0.30 nm isregarded as a crystal part of InGaZnO₄. Each of lattice fringescorresponds to the a-b plane of the InGaZnO₄ crystal.

FIG. 23 shows change in the average size of crystal parts (Averagecrystal size) (at 22 points to 45 points) in each sample. Note that thecrystal part size corresponds to the length of a lattice fringe. FIG. 23indicates that the crystal part size in the a-like OS increases with anincrease in the cumulative electron dose (Cumulative electron dose).Specifically, as shown by (1) in FIG. 23 , a crystal part ofapproximately 1.2 nm (also referred to as an initial nucleus) at thestart of TEM observation grows to a size of approximately 2.6 nm at acumulative electron dose of 4.2×10⁸ e⁻/nm². In contrast, the crystalpart size in the nc-OS and the CAAC-OS shows little change from thestart of electron irradiation to a cumulative electron dose of 4.2×10⁸e⁻/nm². Specifically, as shown by (2) and (3) in FIG. 23 , the averagecrystal sizes in an nc-OS and a CAAC-OS are approximately 1.4 nm andapproximately 2.1 nm, respectively, regardless of the cumulativeelectron dose.

In this manner, growth of the crystal part in the a-like OS is inducedby electron irradiation. In contrast, in the nc-OS and the CAAC-OS,growth of the crystal part is hardly induced by electron irradiation.Therefore, the a-like OS has an unstable structure as compared with thenc-OS and the CAAC-OS.

The a-like OS has a lower density than the nc-OS and the CAAC-OS becauseit contains a void. Specifically, the density of the a-like OS is higherthan or equal to 78.6% and lower than 92.3% of the density of the singlecrystal oxide semiconductor having the same composition. The density ofeach of the nc-OS and the CAAC-OS is higher than or equal to 92.3% andlower than 100% of the density of the single crystal oxide semiconductorhaving the same composition. Note that it is difficult to deposit anoxide semiconductor having a density of lower than 78% of the density ofthe single crystal oxide semiconductor.

For example, in the case of an oxide semiconductor having an atomicratio of In:Ga:Zn=1:1:1, the density of single crystal InGaZnO₄ with arhombohedral crystal structure is 6.357 g/cm³. Accordingly, in the caseof the oxide semiconductor having an atomic ratio of In:Ga:Zn=1:1:1, thedensity of the a-like OS is higher than or equal to 5.0 g/cm³ and lowerthan 5.9 g/cm³. For example, in the case of the oxide semiconductorhaving an atomic ratio of In:Ga:Zn=1:1:1, the density of each of thenc-OS and the CAAC-OS is higher than or equal to 5.9 g/cm³ and lowerthan 6.3 g/cm³.

Note that there is a possibility that an oxide semiconductor having adesired composition cannot exist in a single crystal structure. In thatcase, single crystal oxide semiconductors with different compositionsare combined at an adequate ratio, which makes it possible to calculatedensity equivalent to that of a single crystal oxide semiconductor withthe desired composition. The density of a single crystal oxidesemiconductor having the desired composition can be calculated using aweighted average according to the combination ratio of the singlecrystal oxide semiconductors with different compositions. Note that itis preferable to use as few kinds of single crystal oxide semiconductorsas possible to calculate the density.

As described above, oxide semiconductors have various structures andvarious properties. Note that an oxide semiconductor may be a stackedlayer including two or more films of an amorphous oxide semiconductor,an a-like OS, an nc-OS, and a CAAC-OS, for example.

Embodiment 4

In this embodiment, an example of a display device that includes any ofthe transistors described in the above embodiment will be describedbelow with reference to FIG. 24 to FIG. 26 .

FIG. 24 is atop view of an example of a display device. A display device700 illustrated in FIG. 24 includes a pixel portion 702 provided over afirst substrate 701; a source driver circuit portion 704 and a gatedriver circuit portion 706 provided over the first substrate 701; asealant 712 provided to surround the pixel portion 702, the sourcedriver circuit portion 704, and the gate driver circuit portion 706; anda second substrate 705 provided to face the first substrate 701. Thefirst substrate 701 and the second substrate 705 are sealed with thesealant 712. That is, the pixel portion 702, the source driver circuitportion 704, and the gate driver circuit portion 706 are sealed with thefirst substrate 701, the sealant 712, and the second substrate 705.Although not illustrated in FIG. 24 , a display element is providedbetween the first substrate 701 and the second substrate 705.

In the display device 700, an FPC terminal portion 708 (FPC: FlexiblePrinted Circuit) electrically connected to the pixel portion 702, thesource driver circuit portion 704, and the gate driver circuit portion706 is provided in a region different from the region which issurrounded by the sealant 712 and positioned over the first substrate701. Furthermore, an FPC 716 is connected to the FPC terminal portion708, and a variety of signals and the like are supplied to the pixelportion 702, the source driver circuit portion 704, and the gate drivercircuit portion 706 through the FPC 716. Furthermore, a wiring 710 isconnected to the pixel portion 702, the source driver circuit portion704, the gate driver circuit portion 706, and the FPC terminal portion708. Various signals and the like are applied to the pixel portion 702,the source driver circuit portion 704, the gate driver circuit portion706, and the FPC terminal portion 708 via the wiring 710 from the FPC716.

A plurality of gate driver circuit portions 706 may be provided in thedisplay device 700. An example of the display device 700 in which thesource driver circuit portion 704 and the gate driver circuit portion706 are formed over the first substrate 701 where the pixel portion 702is also formed is described; however, the structure is not limitedthereto. For example, only the gate driver circuit portion 706 may beformed over the first substrate 701 or only the source driver circuitportion 704 may be formed over the first substrate 701. In this case, asubstrate where a source driver circuit, a gate driver circuit, or thelike is formed (e.g., a driver circuit substrate formed using a singlecrystal semiconductor film or a polycrystalline semiconductor film) maybe mounted on the first substrate 701. There is no particular limitationon the connection method of a separately formed driver circuitsubstrate; a chip on glass (COG) method, a wire bonding method, or thelike can be used.

The pixel portion 702, the source driver circuit portion 704, and thegate driver circuit portion 706 included in the display device 700include a plurality of transistors. As the plurality of transistors, anyof the transistors described in Embodiment 2 can be used.

The display device 700 can employ various modes and include variousdisplay elements. Examples of the display element include a liquidcrystal element, an EL (electroluminescence) element (an EL elementincluding organic and inorganic materials, an organic EL element, or aninorganic EL element) including an LED (e.g., a white LED, a red LED, agreen LED, or a blue LED), a transistor (a transistor that emits lightdepending on current), an electron emitter, an electrophoretic element,a display element using MEMS (micro electro mechanical systems), such asa grating light valve (GLV), a digital micromirror device (DMD), a DMS(digital micro shutter) element, a MIRASOL (registered trademark)display, an IMOD (interferometric modulator display) element, or apiezoelectric ceramic display, and an electrowetting element. Besides, adisplay medium whose contrast, luminance, reflectivity, transmittance,or the like is changed by electrical or magnetic effect may be included.Alternatively, quantum dots may be used as the display element. Anexample of a display device including a liquid crystal element is aliquid crystal display (a transmissive liquid crystal display, atransflective liquid crystal display, a reflective liquid crystaldisplay, a direct-view liquid crystal display, or a projection liquidcrystal display). An example of a display device including an EL elementis an EL display. Examples of a display device including an electronemitter include a field emission display (FED) and an SED-type flatpanel display (SED: Surface-conduction Electron-emitter Display). Anexample of a display device including quantum dots is a quantum dotdisplay. An example of a display device including electronic ink or anelectrophoretic element is electronic paper. In a transflective liquidcrystal display or a reflective liquid crystal display, some or all ofpixel electrodes may function as reflective electrodes. For example,some or all of pixel electrodes may contain aluminum, silver, or thelike. In this case, a memory circuit such as an SRAM can be providedunder the reflective electrodes, leading to lower power consumption.

As a display method in the display device 700, a progressive method, aninterlace method, or the like can be employed. Furthermore, colorelements controlled in a pixel at the time of color display are notlimited to three colors: RGB (R, G, and B correspond to red, green, andblue, respectively). For example, four pixels of the R pixel, the Gpixel, the B pixel, and a W (white) pixel may be included.Alternatively, a color element may be composed of two colors among RGBas in PenTile layout. The two colors may differ among color elements.Alternatively, one or more colors of yellow, cyan, magenta, and the likemay be added to RGB. Note that the sizes of display regions may bedifferent between respective dots of color elements. Embodiments of thedisclosed invention are not limited to a display device for colordisplay; the disclosed invention can also be applied to a display devicefor monochrome display.

A coloring layer (also referred to as a color filter) may be used inorder to obtain a full-color display device in which white light (W) fora backlight (e.g., an organic EL element, an inorganic EL element, anLED, or a fluorescent lamp) is used. As the coloring layer, red (R),green (G), blue (B), yellow (Y), or the like may be combined asappropriate, for example. With the use of the coloring layer, highercolor reproducibility can be obtained than in the case without thecoloring layer. In this case, by providing a region with the coloringlayer and a region without the coloring layer, white light in the regionwithout the coloring layer may be directly utilized for display. Bypartly providing the region without the coloring layer, a decrease inluminance due to the coloring layer can be suppressed, and 20% to 30% ofpower consumption can be reduced in some cases when an image isdisplayed brightly. Note that in the case where full-color display isperformed using a self-luminous element such as an organic EL element oran inorganic EL element, elements may emit light of their respectivecolors R, G, B, Y, and W. By using a self-luminous element, powerconsumption can be further reduced as compared to the case of using thecoloring layer in some cases.

In this embodiment, structures of a display device including a VA(vertical alignment) mode liquid crystal element as display elements aredescribed with reference to FIG. 25 and FIG. 26. The VA mode is a kindof method for controlling alignment of liquid crystal molecules of adisplay device. A VA-mode liquid crystal display device is a normallyblack display device in which liquid crystal molecules are aligned in avertical direction with respect to a panel surface when no voltage isapplied. The display device in this embodiment is devised so that onepixel (pixel) is divided into several regions (sub-pixels) and liquidcrystal molecules are made slanted in the respective directions in theregions. This is referred to as domain multiplication or multi-domaindesign.

FIG. 25 is a cross-sectional view taken along dashed-dotted line Q-Rshown in FIG. 24 . The display device 700 illustrated in FIG. 25includes a lead wiring portion 711, the pixel portion 702, the sourcedriver circuit portion 704, and the FPC terminal portion 708. Note thatthe lead wiring portion 711 includes the wiring 710. The pixel portion702 includes a transistor 750 and a capacitor 790. The source drivercircuit portion 704 includes a transistor 752.

Any of the transistors described in Embodiment 2 can be used as thetransistor 750 and the transistor 752.

The transistors used in this embodiment each include an oxidesemiconductor film which is highly purified and in which formation ofoxygen vacancy is suppressed. In the transistors, the current in an offstate (off-state current) can be made small. Accordingly, an electricalsignal such as an image signal can be held for a longer period, and awriting interval can be set longer in an on state. Accordingly, thefrequency of refresh operation can be reduced, which leads to an effectof reducing power consumption.

In addition, the transistors used in this embodiment can have relativelyhigh field-effect mobility and thus are capable of high-speed operation.For example, with such a transistor that can operate at high speed usedfor a liquid crystal display device, a switching transistor in a pixelportion and a driver transistor in a driver circuit portion can beformed over one substrate. That is, a semiconductor device formed usinga silicon wafer or the like is not additionally needed as a drivercircuit, by which the number of components of the semiconductor devicecan be reduced. In addition, the transistor that can operate at highspeed can be used also in the pixel portion, whereby a high-qualityimage can be provided.

The capacitor 790 has a structure in which a dielectric is providedbetween a pair of electrodes. Specifically, a conductive film which isformed through the same process as a conductive film functioning as thegate electrode of the transistor 750 is used as one electrode of thecapacitor 790, and the conductive film functioning as a source electrodeor a drain electrode of the transistor 750 is used as the otherelectrode of the capacitor 790. Furthermore, an insulating filmfunctioning as a gate insulating film of the transistor 750 is used asthe dielectric between the pair of electrodes.

In FIG. 25 , insulating films 764, 766, and 768, and a planarizationinsulating film 770 are formed over the transistor 750, the transistor752, and the capacitor 790.

The insulating films 764, 766, and 768 can be formed using materials andmethods similar to those of the insulating films 514, 516, and 518described in Embodiment 2, respectively. The planarization insulatingfilm 770 can be formed using a heat-resistant organic material, such asa polyimide resin, an acrylic resin, a polyimide amide resin, abenzocyclobutene resin, a polyamide resin, or an epoxy resin. Note thatthe planarization insulating film 770 may be formed by stacking aplurality of insulating films formed using these materials.Alternatively, a structure without the planarization insulating film 770may be employed.

The wiring 710 is formed through the same process as conductive filmsfunctioning as the source electrode and the drain electrode of thetransistor 750 or 752. Note that the wiring 710 may be formed using aconductive film which is formed through a different process from thesource electrode and the drain electrode of the transistor 750 or 752,e.g., a conductive film functioning as a gate electrode. In the casewhere the wiring 710 is formed using a material containing a copperelement, signal delay or the like due to wiring resistance is reduced,which enables display on a large screen.

The FPC terminal portion 708 includes a connection electrode 760, ananisotropic conductive film 780, and the FPC 716. Note that theconnection electrode 760 is formed through the same process as theconductive films functioning as the source electrode and the drainelectrode of the transistor 750 or 752. The connection electrode 760 iselectrically connected to a terminal included in the FPC 716 through theanisotropic conductive film 780.

For example, a glass substrate can be used as the first substrate 701and the second substrate 705. The first substrate 701 and the secondsubstrate 705 can be formed using a material and a method similar tothose of the substrate 502 described in Embodiment 2.

A light-blocking film 738 functioning as a black matrix, a coloringlayer 736 functioning as a color filter, and an insulating film 734 incontact with the light-blocking film 738 and the coloring layer 736 areprovided on the second substrate 705 side.

A structure 778 is provided between the first substrate 701 and thesecond substrate 705. The structure 778 is a columnar spacer obtained byselective etching of an insulating film and is provided to control thethickness (cell gap) between the first substrate 701 and the secondsubstrate 705. Note that a spherical spacer may be used as the structure778.

Alternatively, as illustrated in FIG. 26 , instead of the structure 778,a stacked layer of a plurality of coloring layers 736 may be used as aspacer. In the display device 700 in FIG. 26 , as an example, a redcoloring layer 736R, a green coloring layer 736G, and a blue coloringlayer 736B are included, and the coloring layer 736G and the coloringlayer 736B are provided over the coloring layer 736R in a positionoverlapping with the light-blocking film 738. With such a structure, astep of forming the structure 778 can be omitted. In addition, thedisplay device 700 in FIG. 26 has a structure where the insulating film734 is not provided. Note that as the above-described spacer, a stackedlayer of any two of the coloring layer 736R, the coloring layer 736G,and the coloring layer 736B may be used.

Although the example in which the structure 778 is provided on the firstsubstrate 701 side is described in this embodiment, one embodiment ofthe present invention is not limited thereto. For example, the structure778 may be provided on the second substrate 705 side, or both the firstsubstrate 701 and the second substrate 705 may be provided with thestructure 778.

The display device 700 includes a liquid crystal element 775. The liquidcrystal element 775 includes the conductive film 772, a conductive film774, and a liquid crystal layer 776. The conductive film 774 is providedon the second substrate 705 side and functions as a counter electrode.The display device 700 is capable of displaying an image in such amanner that light transmission or non-transmission of light iscontrolled by change in the alignment state of the liquid crystal layer776 depending on a voltage applied between the conductive film 772 andthe conductive film 774. A projection 744 is provided on the conductivefilm 774.

The conductive film 772 is connected to the conductive film functioningas the source electrode or the drain electrode included in thetransistor 750. The conductive film 772 is formed over the planarizationinsulating film 770 to function as a pixel electrode, i.e., oneelectrode of the display element. The conductive film 772 functions as areflective electrode. The display device 700 is what is called areflective color liquid crystal display device in which external lightis reflected by the conductive film 772 to display an image through thecoloring layer 736.

A conductive film that transmits visible light or a conductive film thatreflects visible light can be used as the conductive film 772. Forexample, a material including one kind selected from indium (In), zinc(Zn), and tin (Sn) is preferably used for the conductive film thattransmits visible light. For example, a material including aluminum orsilver may be used for the conductive film that reflects visible light.In this embodiment, a conductive film that reflects visible light isused as the conductive film 772.

In the case where a conductive film which reflects visible light is usedas the conductive film 772, the conductive film may have a stacked-layerstructure. For example, a 100-nm-thick aluminum film is formed as thebottom layer, and a 30-nm-thick silver alloy film (e.g., an alloy filmincluding silver, palladium, and copper) is formed as the top layer.Such a structure makes it possible to obtain the following effects.

(1) Adhesion between the base film and the conductive film 772 can beimproved. (2) The aluminum film and the silver alloy film can becollectively etched depending on a chemical solution. (3) The conductivefilm 772 can have a favorable cross-sectional shape (e.g., a taperedshape). The reason for (3) is as follows: the etching rate of thealuminum film with the chemical solution is lower than that of thesilver alloy film, or etching of the aluminum film that is the bottomlayer is developed faster than that of the silver alloy film becausewhen the aluminum film that is the bottom layer is exposed after theetching of the silver alloy film that is the top layer, electrons areextracted from metal that is less noble than the silver alloy film,i.e., aluminum that is metal having a high ionization tendency, and thusetching of the silver alloy film is suppressed.

Note that the display device 700 illustrated in FIG. 25 to FIG. 27 is areflective color liquid crystal display device given as an example, buta display type is not limited thereto. For example, a transmissive colorliquid crystal display device in which the conductive film 772 is aconductive film that transmits visible light may be provided. In thecase where the display device 700 is a transmissive liquid crystaldisplay device, a pair of electrodes included in the capacitor 790 isprovided in a position not overlapping with the conductive film 772. Inaddition, each layer provided in a path of light entering from thesubstrate 701 and emitted through the liquid crystal element 775 and thecoloring layer 736 is preferably a layer that transmits visible light.

The conductive film 772 includes a slit 725. The slit 725 is providedfor controlling alignment of the liquid crystal molecules. In addition,an alignment film 746 is provided over the conductive film 772, theplanarization insulating film 770, and the structure 778, and similarly,an alignment film 748 is provided over the conductive film 774.

When voltage is applied to the conductive film 772 provided with theslit 725, electric field distortion (an oblique electric field) isgenerated near the slit 725. The slit 725 and the projection 744 on thesubstrate 705 side are alternately arranged in a dovetailing manner andthus, an oblique electric field is effectively generated to controlalignment of the liquid crystals, so that a direction of alignment ofthe liquid crystals varies from place to place. In other words, theliquid crystal molecules are made slanted in the respective directionsin the plurality of subpixels included in one pixel, so that domainmultiplication is achieved and the viewing angle of the liquid crystaldisplay panel is expanded.

Although not illustrated in FIG. 25 , an optical member (an opticalsubstrate) such as a polarizing member, a retardation member, or ananti-reflection member, and the like may be provided as appropriate. Forexample, circular polarization may be employed by using a polarizingsubstrate and a retardation substrate. In addition, a backlight, a sidelight, or the like may be used as a light source.

The structures described in this embodiment can be used in appropriatecombination with any of the structures described in the otherembodiments.

Embodiment 5

In this embodiment, a display module and electronic devices that includea semiconductor device of one embodiment of the present invention willbe described with reference to FIG. 27 and FIG. 28 .

In a display module 8000 illustrated in FIG. 27 , a touch panel 8004connected to an FPC 8003, a display panel 8006 connected to an FPC 8005,a backlight 8007, a frame 8009, a printed board 8010, and a battery 8011are provided between an upper cover 8001 and a lower cover 8002.

The display device of one embodiment of the present invention can beused for, for example, the display panel 8006.

The shapes and sizes of the upper cover 8001 and the lower cover 8002can be changed as appropriate in accordance with the sizes of the touchpanel 8004 and the display panel 8006.

The touch panel 8004 can be a resistive touch panel or a capacitivetouch panel and can be formed so as to overlap with the display panel8006. A counter substrate (sealing substrate) of the display panel 8006can have a touch panel function. A photosensor may be provided in eachpixel of the display panel 8006 so that an optical touch panel isobtained.

The backlight 8007 includes light sources 8008. Note that although astructure in which the light sources 8008 are provided over thebacklight 8007 is illustrated in FIG. 27 , one embodiment of the presentinvention is not limited to this structure. For example, a structure inwhich the light sources 8008 are provided at an end portion of thebacklight 8007 and a light diffusion plate is further provided may beemployed. Note that the backlight 8007 need not be provided in the casewhere a self-luminous light-emitting element such as an organic ELelement is used or in the case where a reflective panel or the like isemployed.

The frame 8009 protects the display panel 8006 and also functions as anelectromagnetic shield for blocking electromagnetic waves generated bythe operation of the printed board 8010. The frame 8009 may function asa radiator plate.

The printed board 8010 is provided with a power supply circuit and asignal processing circuit for outputting a video signal and a clocksignal. As a power source for supplying power to the power supplycircuit, an external commercial power source or a power source using thebattery 8011 provided separately may be used. The battery 8011 can beomitted in the case of using a commercial power source.

The display module 8000 may be additionally provided with a member suchas a polarizing plate, a retardation plate, or a prism sheet.

FIG. 28(A) to FIG. 28(G) illustrate electronic devices. These electronicdevices can include a housing 5000, a display portion 5001, a speaker5003, an LED lamp 5004, operation keys 5005 (including a power switch oran operation switch), a connection terminal 5006, a sensor 5007 (asensor having a function of measuring or sensing force, displacement,position, speed, acceleration, angular velocity, optical rotation alfrequency, distance, light, liquid, magnetism, temperature, chemicalsubstance, sound, time, hardness, electric field, current, voltage,electric power, radiation, flow rate, humidity, gradient, oscillation,odor, or infrared ray), a microphone 5008, and the like.

FIG. 28(A) illustrates a mobile computer that can include a switch 5009,an infrared port 5010, and the like in addition to the above components.FIG. 28(B) illustrates a portable image reproducing device (e.g., a DVDplayer) that is provided with a memory medium and can include a seconddisplay portion 5002, a memory medium reading portion 5011, and the likein addition to the above components. FIG. 28(C) illustrates agoggle-type display that can include the second display portion 5002, asupport 5012, an earphone 5013, and the like in addition to the abovecomponents. FIG. 28(D) illustrates a portable game machine that caninclude the memory medium reading portion 5011 and the like in additionto the above components. FIG. 28(E) illustrates a digital camera thathas a television reception function and can include an antenna 5014, ashutter button 5015, an image receiving portion 5016, and the like inaddition to the above components. FIG. 28(F) illustrates a portable gamemachine that can include the second display portion 5002, the memorymedium reading portion 5011, and the like in addition to the abovecomponents. FIG. 28(G) illustrates a portable television receiver thatcan include a charger 5017 capable of transmitting and receivingsignals, and the like in addition to the above components.

The electronic devices illustrated in FIG. 28(A) to FIG. 28(G) can havea variety of functions, for example, a function of displaying a varietyof data (a still image, a moving image, a text image, and the like) onthe display portion, a touch panel function, a function of displaying acalendar, date, time, and the like, a function of controlling a processwith a variety of software (programs), a wireless communicationfunction, a function of being connected to a variety of computernetworks with a wireless communication function, a function oftransmitting and receiving a variety of data with a wirelesscommunication function, a function of reading a program or data storedin a memory medium and displaying the program or data on the displayportion, and the like. Furthermore, the electronic device including aplurality of display portions can have a function of displaying imagedata mainly on one display portion while displaying text data on anotherdisplay portion, a function of displaying a three-dimensional image bydisplaying images on a plurality of display portions with a parallaxtaken into account, or the like.

Furthermore, the electronic device including an image receiving portioncan have a function of shooting a still image, a function of taking amoving image, a function of automatically or manually correcting a shotimage, a function of storing a shot image in a memory medium (anexternal memory medium or a memory medium incorporated in the camera), afunction of displaying a shot image on the display portion, or the like.Note that functions that can be provided for the electronic devicesillustrated in FIG. 28(A) to FIG. 28(G) are not limited to thosedescribed above, and the electronic devices can have a variety offunctions.

The electronic devices described in this embodiment each include thedisplay portion for displaying some sort of data. The display devicedescribed in Embodiment 4 can be used in the display portion.

The structure described in this embodiment can be used as appropriate incombination with any of the structures described in the otherembodiments.

REFERENCE NUMERALS

-   100: pixel-   101: substrate-   103: scan line-   105 a: capacitor wiring-   105 b: capacitor wiring-   107: gate insulating film-   107 a: gate insulating film-   107 b: gate insulating film-   114: insulating film-   116: insulating film-   116 a: insulating film-   116 b: insulating film-   116 c: insulating film-   121: signal line-   123: electrode-   125 a: electrode-   125 b: electrode-   135: semiconductor film-   135 a: oxide semiconductor film-   135 b: oxide semiconductor film-   136: transistor-   137: transistor-   139 a: pixel electrode-   139 b: pixel electrode-   140: capacitor-   141: capacitor-   142: liquid crystal element-   143: liquid crystal element-   144 a: opening-   144 b: opening-   145: capacitor-   146: capacitor-   148: pixel electrode-   148 a: oxide conductor film-   148 b: oxide conductor film-   149: pixel electrode-   200: pixel-   203: scan line-   221: signal line-   223 a: electrode-   223 b: electrode-   236: transistor-   237: transistor-   300: pixel-   301: substrate-   303: scan line-   305 a: capacitor wiring-   305 b: capacitor wiring-   307: gate insulating film-   316: insulating film-   321: signal line-   323 a: electrode-   323 b: electrode-   325 a: electrode-   325 b: electrode-   335: semiconductor film-   336: transistor-   337: transistor-   339 a: pixel electrode-   339 b: pixel electrode-   340: capacitor-   341: capacitor-   342: liquid crystal element-   343: liquid crystal element-   344 a: opening-   344 b: opening-   345 a: electrode-   345 b: electrode-   346 a: opening-   346 b: opening-   500: transistor-   502: substrate-   504: conductive film-   506: insulating film-   507: insulating film-   508: oxide semiconductor film-   508 a: oxide semiconductor film-   508 b: oxide semiconductor film-   509: oxide semiconductor film-   509 a: oxide semiconductor film-   509 b: oxide semiconductor film-   512: conductive film-   512 a: conductive film-   512 b: conductive film-   514: insulating film-   516: insulating film-   518: insulating film-   519: insulating film-   520: conductive film-   520 a: conductive film-   520 b: conductive film-   531: barrier film-   536 a: mask-   536 b: mask-   538: etchant-   539: etchant-   540: oxygen-   540 a: oxygen-   542: etchant-   542 a: opening-   542 b: opening-   542 c: opening-   570: transistor-   700: display device-   701: substrate-   702: pixel portion-   704: source driver circuit portion-   705: substrate-   706: gate driver circuit portion-   708: FPC terminal portion-   710: wiring-   711: wiring portion-   712: sealant-   716: FPC-   725: slit-   734: insulating film-   736: coloring layer-   736B: coloring layer-   736G: coloring layer-   736R: coloring layer-   738: light-blocking film-   744: projection-   746: alignment film-   748: alignment film-   750: transistor-   752: transistor-   760: connection electrode-   764: insulating film-   766: insulating film-   768: insulating film-   770: planarization insulating film-   772: conductive film-   774: conductive film-   775: liquid crystal element-   776: liquid crystal layer-   778: structure-   780: anisotropic conductive film-   790: capacitor-   5000: housing-   5001: display portion-   5002: display portion-   5003: speaker-   5004: LED lamp-   5005: operation key-   5006: connection terminal-   5007: sensor-   5008: microphone-   5009: switch-   5010: infrared port-   5011: memory medium reading portion-   5012: support-   5013: earphone-   5014: antenna-   5015: shutter button-   5016: image receiving portion-   5017: charger-   5100: pellet-   5120: substrate-   5161: region-   8000: display module-   8001: upper cover-   8002: lower cover-   8003: FPC-   8004: touch panel-   8005: FPC-   8006: display panel-   8007: backlight-   8008: light source-   8009: frame-   8010: printed board-   8011: battery

1. A display device comprising: a plurality of pixels, a first pixel ofthe plurality of pixels comprising: a first transistor; a secondtransistor; a first pixel electrode electrically connected to the firsttransistor; a second pixel electrode electrically connected to thesecond transistor; a first capacitor electrically connected to the firsttransistor; a second capacitor electrically connected to the secondtransistor; a first conductive layer having a region that functions as agate electrode of the first transistor, a region that functions as agate electrode of the second transistor, and a region that functions asa scan line; a second conductive layer comprising a same material as thefirst conductive layer and having a region that functions as oneelectrode of the first capacitor; a first insulating layer having aregion in contact with a top surface of the first conductive layer and aregion in contact with a top surface of the second conductive layer; asemiconductor film provided over the first insulating layer, thesemiconductor film comprising a channel formation region of the firsttransistor and a channel formation region of the second transistor; athird conductive layer provided over the semiconductor film, the thirdconductive layer having a region that functions as one of a sourceelectrode and a drain electrode of the first transistor, a region thatfunctions as one of a source electrode and a drain electrode of thesecond transistor, and a region that functions as a signal line; afourth conductive layer having a region that functions as the other ofthe source electrode and the drain electrode of the first transistor, aregion that functions as the other electrode of the first capacitor, anda region in contact with the first pixel electrode; a fifth conductivelayer having a region that functions as the other of the sourceelectrode and the drain electrode of the second transistor and a regionin contact with the second pixel electrode; a sixth conductive layercomprising a same material as the third conductive layer, the fourthconductive layer, and the fifth conductive layer; and a secondinsulating layer having a region in contact with a top surface of thethird conductive layer, a region in contact with a top surface of thefourth conductive layer, a region in contact with a top surface of thefifth conductive layer, and a region in contact with a top surface ofthe sixth conductive layer, wherein, in a plan view, the sixthconductive layer has a region extending in a direction parallel to thedirection in which the third conductive layer extends, wherein the firstpixel electrode is provided over the second insulating layer, andwherein the first pixel electrode has a region overlapping the secondconductive layer via the fourth conductive layer and a regionoverlapping the second conductive layer via the sixth conductive layer.2. A display device comprising: a plurality of pixels, a first pixel ofthe plurality of pixels comprising: a first transistor; a secondtransistor; a first pixel electrode electrically connected to the firsttransistor; a second pixel electrode electrically connected to thesecond transistor; a first capacitor electrically connected to the firsttransistor; a second capacitor electrically connected to the secondtransistor; a first conductive layer having a region that functions as agate electrode of the first transistor, a region that functions as agate electrode of the second transistor, and a region that functions asa scan line; a second conductive layer comprising a same material as thefirst conductive layer and having a region that functions as oneelectrode of the first capacitor; a first insulating layer having aregion in contact with a top surface of the first conductive layer and aregion in contact with a top surface of the second conductive layer; asemiconductor film provided over the first insulating layer, thesemiconductor film comprising a channel formation region of the firsttransistor and a channel formation region of the second transistor; athird conductive layer provided over the semiconductor film, the thirdconductive layer having a region that functions as one of a sourceelectrode and a drain electrode of the first transistor, a region thatfunctions as one of a source electrode and a drain electrode of thesecond transistor, and a region that functions as a signal line; afourth conductive layer having a region that functions as the other ofthe source electrode and the drain electrode of the first transistor, aregion that functions as the other electrode of the first capacitor, anda region in contact with the first pixel electrode; a fifth conductivelayer having a region that functions as the other of the sourceelectrode and the drain electrode of the second transistor and a regionin contact with the second pixel electrode; a sixth conductive layercomprising a same material as the third conductive layer, the fourthconductive layer, and the fifth conductive layer; and a secondinsulating layer having a region in contact with a top surface of thethird conductive layer, a region in contact with a top surface of thefourth conductive layer, a region in contact with a top surface of thefifth conductive layer, and a region in contact with a top surface ofthe sixth conductive layer, wherein, in a plan view, the sixthconductive layer has a region extending in a direction parallel to thedirection in which the third conductive layer extends, wherein the firstpixel electrode is provided over the second insulating layer, whereinthe first pixel electrode has a region overlapping the second conductivelayer via the fourth conductive layer and a region overlapping thesecond conductive layer via the sixth conductive layer, wherein thefirst conductive layer has a region extending in a directionintersecting the direction in which the third conductive layer extends,and wherein the second conductive layer has a region overlapping with athird pixel electrode of a second pixel of the plurality of pixelsadjacent to a direction in which the first conductive layer extends. 3.A display device comprising: a plurality of pixels, a first pixel of theplurality of pixels comprising: a first transistor; a second transistor;a first pixel electrode electrically connected to the first transistor;a second pixel electrode electrically connected to the secondtransistor; a first capacitor electrically connected to the firsttransistor; a second capacitor electrically connected to the secondtransistor; a first conductive layer having a region that functions as agate electrode of the first transistor, a region that functions as agate electrode of the second transistor, and a region that functions asa scan line; a second conductive layer comprising a same material as thefirst conductive layer and having a region that functions as oneelectrode of the first capacitor; a first insulating layer having aregion in contact with a top surface of the first conductive layer and aregion in contact with a top surface of the second conductive layer; asemiconductor film, comprising silicon, provided over the firstinsulating layer, the semiconductor film comprising a channel formationregion of the first transistor and a channel formation region of thesecond transistor; a third conductive layer provided over thesemiconductor film, the third conductive layer having a region thatfunctions as one of a source electrode and a drain electrode of thefirst transistor, a region that functions as one of a source electrodeand a drain electrode of the second transistor, and a region thatfunctions as a signal line; a fourth conductive layer having a regionthat functions as the other of the source electrode and the drainelectrode of the first transistor, a region that functions as the otherelectrode of the first capacitor, and a region in contact with the firstpixel electrode; a fifth conductive layer having a region that functionsas the other of the source electrode and the drain electrode of thesecond transistor and a region in contact with the second pixelelectrode; a sixth conductive layer comprising a same material as one ofthe third conductive layer, the fourth conductive layer, and the fifthconductive layer; a second insulating layer having a region in contactwith a top surface of the third conductive layer, a region in contactwith a top surface of the fourth conductive layer, a region in contactwith a top surface of the fifth conductive layer, and a region incontact with a top surface of the sixth conductive layer; and a liquidcrystal layer over the first pixel electrode, wherein, in a plan view,the sixth conductive layer has a region extending in a directionparallel to the direction in which the third conductive layer extends,wherein the first pixel electrode is provided over the second insulatinglayer, and wherein the first pixel electrode has a region overlappingthe second conductive layer via the fourth conductive layer and a regionoverlapping the second conductive layer via the sixth conductive layer.4. The display device according to claim 1, wherein the sixth conductivelayer has a region that functions as a capacitor wiring.
 5. The displaydevice according to claim 2, wherein the sixth conductive layer has aregion that functions as a capacitor wiring.
 6. The display deviceaccording to claim 3, wherein the sixth conductive layer has a regionthat functions as a capacitor wiring.